Datasheet > NVMYS021N06CLTWG

NVMYS021N06CLTWG

更新时间： 2024-11-12 11:15:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	340K
描述
功率 MOSFET，40 V，0.9Ω，322 A，单 N 沟道

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NVMYS021N06CLTWG 数据手册

NVMYS021N06CL

MOSFET – Power, Single

N-Channel

60 V, 21 mW, 27 A

Features

www.onsemi.com

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

MAX

I MAX

(BR)DSS

DS(ON)

• LFPAK4 Package, Industry Standard

21 mW @ 10 V

60 V

27 A

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

31.5 mW @ 4.5 V

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

D (5)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

G (4)

Continuous Drain

Current R

Steady

State

= 25°C

= 100°C

= 25°C

(Notes 1, 2, 3)

S (1,2,3)

N−CHANNEL MOSFET

Power Dissipation

(Notes 1, 2)

= 100°C

9.0

9.8

6.9

3.8

1.9

131

Continuous Drain

Current R

Steady

State

T = 25°C

MARKING

DIAGRAM

T = 100°C

(Notes 1, 2, 3)

Power Dissipation

T = 25°C

(Notes 1 & 2)

T = 100°C

021N06

AWLYW

Pulsed Drain Current

T = 25°C, t = 10 ms

LFPAK4

CASE 760AB

Operating Junction and Storage Temperature

T , T

−55 to

+ 175

°C

stg

Source Current (Body Diode)

23.5

021N06CL = Specific Device Code

Single Pulse Drain−to−Source Avalanche

= Assembly Location

= Wafer Lot

= Year

Energy (I

= 1.1 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

= Work Week

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering, marking and shipping information on

page 5 of this data sheet.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

5.3

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

July, 2019 − Rev. 0

NVMYS021N06CL/D

12 3 4 5 6 7

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与NVMYS021N06CLTWG相关器件

型号	品牌	获取价格	描述	数据表
NVMYS021N10MCLTWG	ONSEMI	获取价格	MOSFET – Power, Single N-Channel 100 V, 23 mΩ
NVMYS025N06CLTWG	ONSEMI	获取价格	功率 MOSFET，单 N 沟道，60 V，30Ω，20 A
NVMYS029N08LHTWG	ONSEMI	获取价格	MOSFET - Power, Single N-Channel, 80 V, 29 mΩ
NVMYS1D2N04CLTWG	ONSEMI	获取价格	功率 MOSFET 40 V，1.1 mΩ，258 A，单 N 沟道
NVMYS1D3N04CTWG	ONSEMI	获取价格	功率 MOSFET，单 N 沟道，40 V，1.15Ω，252 A
NVMYS1D6N04CLT1G	ONSEMI	获取价格	Power MOSFET 40V, 1.07 mΩ, 280 A, Single N−Ch
NVMYS1D6N04CLTWG	ONSEMI	获取价格	Power MOSFET 40V, 1.07 mΩ, 280 A, Single N−Ch
NVMYS1D7N04CT1G	ONSEMI	获取价格	Power MOSFET 40V, 1.7 mΩ, 190 A, Single N−Cha
NVMYS1D7N04CTWG	ONSEMI	获取价格	Power MOSFET 40V, 1.7 mΩ, 190 A, Single N−Cha
NVMYS2D1N04CLTWG	ONSEMI	获取价格	功率 MOSFET，40V，2.15Ω，139 A，单 N 沟道

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