Datasheet > NVMYS8D0N04CTWG

NVMYS8D0N04CTWG

更新时间： 2024-11-12 11:16:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	335K
描述
功率 MOSFET， 40 V，8.0 mΩ，48 A，单 N 沟道

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NVMYS8D0N04CTWG 数据手册

NVMYS8D0N04C

MOSFET – Power, Single

N-Channel

40 V, 8.1 mW, 49 A

Features

www.onsemi.com

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

MAX

I MAX

(BR)DSS

DS(ON)

• LFPAK4 Package, Industry Standard

40 V

8.1 mW @ 10 V

49 A

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

D (5,6)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

G (4)

Continuous Drain

Current R

Steady

State

= 25°C

= 100°C

= 25°C

S (1,2,3)

N−CHANNEL MOSFET

(Notes 1, 3)

Power Dissipation

(Note 1)

= 100°C

Continuous Drain

Current R

Steady

State

T = 25°C

MARKING

DIAGRAM

T = 100°C

(Notes 1, 2, 3)

Power Dissipation

T = 25°C

3.8

1.9

255

(Notes 1, 2)

8D0N04

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

AWLYW

LFPAK4

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

CASE 760AB

Source Current (Body Diode)

8D0N04C

= Specific Device Code

= Assembly Location

=Wafer Lot

= Year

= Work Week

Single Pulse Drain−to−Source Avalanche

Energy (I

= 2.9 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

4.0

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

July, 2019 − Rev. 0

NVMYS8D0N04C/D

12 3 4 5 6 7

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