MOSFET – Power, Single
N-Channel
60 V, 9.2 mW, 50 A
NVMYS9D3N06CL
Features
• Small Footprint (5x6 mm) for Compact Design
www.onsemi.com
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• LFPAK4 Package, Industry Standard
9.2 mW @ 10 V
13 mW @ 4.5 V
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
60 V
50 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
N−Channel
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
D (5)
V
DSS
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25°C
I
50
A
C
D
q
JC
G (4)
T
C
= 100°C
35
(Notes 1, 3)
Steady
State
Power Dissipation
T
C
= 25°C
P
46
23
14
W
A
D
R
(Note 1)
S (1, 2, 3)
q
JC
T
C
= 100°C
Continuous Drain
Current R
T = 25°C
A
I
D
q
JA
MARKING
DIAGRAM
T = 100°C
A
10
(Notes 1, 2, 3)
Steady
State
Power Dissipation
T = 25°C
A
P
3.6
1.8
290
W
D
R
(Notes 1 & 2)
q
JA
T = 100°C
A
9D3N06
CL
AWLYW
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
T , T
−55 to
°C
J
stg
+ 175
LFPAK4
CASE 760AB
Source Current (Body Diode)
I
S
52
88
A
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
9D3N06CL = Specific Device Code
Energy (I
= 2.3 A)
L(pk)
A
= Assembly Location
=Wafer Lot
WL
Y
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
= Year
W
= Work Week
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
3.1
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
39
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
November, 2019 − Rev. 0
NVMYS9D3N06CL/D