Datasheet > NVMYS7D3N04CLTWG

NVMYS7D3N04CLTWG

更新时间： 2024-09-25 11:15:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	337K
描述
功率 MOSFET，40V，7.3Ω，50 A，单 N 沟道

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NVMYS7D3N04CLTWG 数据手册

NVMYS7D3N04CL

MOSFET – Power, Single

N-Channel

40 V, 7.3 mW, 52 A

Features

www.onsemi.com

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

MAX

I MAX

(BR)DSS

DS(on)

• Low Capacitance to Minimize Driver Losses

• LFPAK4 Package, Industry Standard

7.3 mꢃ @ 10 V

12 mꢃ @ 4.5 V

40 V

52 A

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

N−Channel

D (5 − 8)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

Continuous Drain Cur- Steady

= 25°C

= 100°C

= 25°C

G (4)

rent R

3, 4)

(Notes 1, 2,

State

ꢀ

S (1, 2, 3)

Power Dissipation

(Notes 1, 2, 3)

ꢀ

= 100°C

MARKING

DIAGRAM

Continuous Drain Cur- Steady

T = 25°C

rent R

3, 4)

(Notes 1 &

State

ꢀ

T = 100°C

Power Dissipation

(Notes 1, 3)

T = 25°C

3.8

1.9

269

ꢀ

7D3N04

AWLYW

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ꢁ s

LFPAK4

CASE 760AB

Operating Junction and Storage Temperature

T , T

−55 to

+175

°C

stg

Source Current (Body Diode)

7D3N04CL = Specific Device Code

= Assembly Location

= Wafer Lot

= Year

Single Pulse Drain−to−Source Avalanche

Energy (I

= 2.9 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

= Work Week

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

Parameter

Symbol

Value

4.0

Unit

Junction−to−Case − Steady State (Note 3)

Junction−to−Ambient − Steady State (Note 3)

°C/W

ꢀ

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Psi (ꢂ ) is used as required per JESD51−12 for packages in which

substantially less than 100% of the heat flows to single case surface.

3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

4. Continuous DC current rating. Maximum current for pulses as long as 1

second is higher but is dependent on pulse duration and duty cycle.

Publication Order Number:

July, 2019 − Rev. 0

NVMYS7D3N04CL/D

12 3 4 5 6 7

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