Datasheet > NVMYS2D9N04CLTWG

NVMYS2D9N04CLTWG

更新时间： 2024-11-12 11:14:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	336K
描述
功率 MOSFET，40 V，2.8 mΩ，110 A，单 N 沟道

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NVMYS2D9N04CLTWG 数据手册

NVMYS2D9N04CL

MOSFET – Power, Single

N-Channel

40 V, 2.8 mW, 110 A

Features

www.onsemi.com

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

MAX

I MAX

(BR)DSS

DS(ON)

• LFPAK4 Package, Industry Standard

2.8 mW @ 10 V

4.4 mW @ 4.5 V

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

40 V

110 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

D (5)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

G (4)

Continuous Drain

Current R

Steady

State

= 25°C

= 100°C

= 25°C

110

(Notes 1, 3)

S (1,2,3)

N−CHANNEL MOSFET

Power Dissipation

(Note 1)

= 100°C

Continuous Drain

Current R

Steady

State

T = 25°C

MARKING

DIAGRAM

T = 100°C

(Notes 1, 2, 3)

Power Dissipation

T = 25°C

3.7

1.6

740

(Notes 1, 2)

T = 100°C

2D9N04

AWLYW

Pulsed Drain Current

T = 25°C, t = 10 ms

LFPAK4

CASE 760AB

Operating Junction and Storage Temperature

Range

T , T

−55 to

+ 175

°C

stg

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

215

2D9N04CL = Specific Device Code

Energy (I

= 7 A)

L(pk)

= Assembly Location

= Wafer Lot

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

= Year

= Work Week

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

2.2

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

July, 2019 − Rev. 1

NVMYS2D9N04CL/D

12 3 4 5 6 7

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与NVMYS2D9N04CLTWG相关器件

型号	品牌	获取价格	描述	数据表
NVMYS3D3N06CLTWG	ONSEMI	获取价格	功率 MOSFET，40 V，3.3Ω，123 A，单 N 沟道
NVMYS3D5N04CTWG	ONSEMI	获取价格	Power MOSFET 40 V, 3.3Ω, 102 A, Single N-Chan
NVMYS3D8N04CLTWG	ONSEMI	获取价格	Power MOSFET 40 V, 3.7mΩ, 87 A, Single N-Chan
NVMYS4D1N06CLTWG	ONSEMI	获取价格	Power MOSFET, 60 V, 4.0 mOhms, 100 A, Single N-Channel
NVMYS4D5N04CTWG	ONSEMI	获取价格	Power MOSFET 40 V, 4.5mΩ, 80 A, Single N-Chan
NVMYS4D6N04CLTWG	ONSEMI	获取价格	功率 MOSFET，40 V，4.5 mΩ，78 A，单 N 沟道
NVMYS4D6N06CTWG	ONSEMI	获取价格	Power MOSFET 60 V, 4.7 mΩ, 92 A, Single N-Cha
NVMYS5D3N04CTWG	ONSEMI	获取价格	功率 MOSFET，40 V，5.3Ω，68 A，单 N 沟道
NVMYS6D2N06CLTWG	ONSEMI	获取价格	功率 MOSFET，单 N 沟道，60 V，6.2Ω，69 A
NVMYS7D0N06CTWG	ONSEMI	获取价格	Power MOSFET 60 V, 1.68 mOhms, 224 A, Single N-Channel

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