Datasheet > NVMYS7D0N06CTWG

NVMYS7D0N06CTWG

更新时间： 2024-11-12 11:11:11

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	209K
描述
Power MOSFET 60 V, 1.68 mOhms, 224 A, Single N-Channel

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NVMYS7D0N06CTWG 数据手册

DATA SHEET

www.onsemi.com

MOSFET - Power, Single

N-Channel

60 V, 7.0 mW, 66 A

MAX

I MAX

(BR)DSS

DS(ON)

60 V

7.0 mW @ 10 V

66 A

D (5)

NVMYS7D0N06C

Features

• Small Footprint (5x6 mm) for Compact Design

G (4)

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

S (1,2,3)

N−CHANNEL MOSFET

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

MARKING

DIAGRAM

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

7D0N06

AWLYW

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

46.8

61.3

30.7

16.9

11.9

4.0

LFPAK4

CASE 760AB

(Notes 1, 3)

Steady

State

Power Dissipation

(Note 1)

= 100°C

7D0N06C

= Specific Device Code

= Assembly Location

=Wafer Lot

Continuous Drain

Current R

T = 25°C

T = 100°C

= Year

= Work Week

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25°C

(Notes 1, 2)

T = 100°C

2.0

Pulsed Drain Current

T = 25°C, t = 10 ms

366

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

Source Current (Body Diode)

51.1

195

Single Pulse Drain−to−Source Avalanche

Energy (I

= 3.6 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

2.45

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

37.6

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

October, 2021 − Rev. 0

NVMYS7D0N06C/D

12 3 4 5 6

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