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NVMYS7D0N06CTWG PDF预览

NVMYS7D0N06CTWG

更新时间: 2023-09-03 20:28:31
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 209K
描述
Power MOSFET 60 V, 1.68 mOhms, 224 A, Single N-Channel

NVMYS7D0N06CTWG 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET - Power, Single  
N-Channel  
60 V, 7.0 mW, 66 A  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
60 V  
7.0 mW @ 10 V  
66 A  
D (5)  
NVMYS7D0N06C  
Features  
Small Footprint (5x6 mm) for Compact Design  
G (4)  
Low R  
to Minimize Conduction Losses  
DS(on)  
Low Q and Capacitance to Minimize Driver Losses  
G
S (1,2,3)  
NCHANNEL MOSFET  
AECQ101 Qualified and PPAP Capable  
These Devices are PbFree and are RoHS Compliant  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
MARKING  
DIAGRAM  
Parameter  
DraintoSource Voltage  
Symbol  
Value  
60  
Unit  
V
V
DSS  
GatetoSource Voltage  
V
20  
V
GS  
7D0N06  
C
AWLYW  
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
66  
A
C
D
q
JC  
T
C
46.8  
61.3  
30.7  
16.9  
11.9  
4.0  
LFPAK4  
CASE 760AB  
(Notes 1, 3)  
Steady  
State  
Power Dissipation  
T
C
P
W
A
D
R
(Note 1)  
q
JC  
T
C
= 100°C  
7D0N06C  
A
WL  
Y
W
= Specific Device Code  
= Assembly Location  
=Wafer Lot  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
q
JA  
T = 100°C  
A
= Year  
= Work Week  
(Notes 1, 2, 3)  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
W
D
R
(Notes 1, 2)  
q
JA  
T = 100°C  
A
2.0  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
366  
A
A
p
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
Operating Junction and Storage Temperature  
Range  
T , T  
55 to  
+175  
°C  
J
stg  
Source Current (Body Diode)  
I
51.1  
195  
A
S
Single Pulse DraintoSource Avalanche  
E
AS  
mJ  
Energy (I  
= 3.6 A)  
L(pk)  
Lead Temperature for Soldering Purposes  
(1/8from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
2.45  
Unit  
JunctiontoCase Steady State  
JunctiontoAmbient Steady State (Note 2)  
R
°C/W  
q
JC  
R
37.6  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
October, 2021 Rev. 0  
NVMYS7D0N06C/D  
 

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