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NVMYS6D2N06CLTWG PDF预览

NVMYS6D2N06CLTWG

更新时间: 2023-09-03 20:39:24
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 328K
描述
功率 MOSFET,单 N 沟道,60 V,6.2Ω,69 A

NVMYS6D2N06CLTWG 数据手册

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MOSFET – Power, Single  
N-Channel  
60 V, 6.1 mW, 71 A  
NVMYS6D2N06CL  
Features  
www.onsemi.com  
Small Footprint (5x6 mm) for Compact Design  
Low R  
to Minimize Conduction Losses  
DS(on)  
Low Q and Capacitance to Minimize Driver Losses  
G
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
LFPAK4 Package, Industry Standard  
6.1 mW @ 10 V  
8.8 mW @ 4.5 V  
AECQ101 Qualified and PPAP Capable  
These Devices are PbFree and are RoHS Compliant  
60 V  
71 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
D (5)  
Parameter  
DraintoSource Voltage  
Symbol  
Value  
60  
Unit  
V
V
DSS  
GatetoSource Voltage  
V
GS  
20  
V
G (4)  
Continuous Drain  
Current R  
Steady  
State  
T
= 25°C  
= 100°C  
= 25°C  
I
71  
A
C
D
q
JC  
T
C
50  
(Notes 1, 2, 3)  
S (1,2,3)  
NCHANNEL MOSFET  
Power Dissipation  
T
C
P
61  
W
A
D
R
(Notes 1, 2)  
q
JC  
T
C
= 100°C  
31  
Continuous Drain  
Current R  
Steady  
State  
T = 25°C  
A
I
D
17  
MARKING  
DIAGRAM  
q
JA  
T = 100°C  
A
12  
(Notes 1, 2, 3)  
Power Dissipation  
T = 25°C  
P
3.6  
1.8  
440  
W
A
D
R
(Notes 1, 2)  
q
JA  
T = 100°C  
A
6D2N06  
CL  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
AWLYW  
Operating Junction and Storage Temperature  
T , T  
55 to  
+ 175  
°C  
LFPAK4  
CASE 760AB  
J
stg  
Source Current (Body Diode)  
I
68  
A
S
2D6N06CL = Specific Device Code  
Single Pulse DraintoSource Avalanche  
E
AS  
166  
mJ  
A
WL  
Y
= Assembly Location  
=Wafer Lot  
= Year  
Energy (T = 25°C, I  
= 3.6 A)  
J
L(pk)  
Lead Temperature for Soldering Purposes  
(1/8from case for 10 s)  
T
260  
°C  
L
W
= Work Week  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
2.4  
Unit  
JunctiontoCase Steady State  
JunctiontoAmbient Steady State (Note 2)  
R
°C/W  
q
JC  
R
39  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
November, 2019 Rev. 0  
NVMYS6D2N06CL/D  
 

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