Datasheet > NVMYS3D8N04CLTWG

NVMYS3D8N04CLTWG

更新时间： 2023-09-03 20:28:38

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	331K
描述
Power MOSFET 40 V, 3.7mΩ, 87 A, Single N-Channel

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NVMYS3D8N04CLTWG 数据手册

MOSFET – Power, Single

N-Channel

40 V, 3.7 mW, 87 A

NVMYS3D8N04CL

Features

www.onsemi.com

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

MAX

I MAX

(BR)DSS

DS(ON)

• LFPAK4 Package, Industry Standard

3.7 mW @ 10 V

6.0 mW @ 4.5 V

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

40 V

87 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

D (5)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

G (4)

= 100°C

(Notes 1, 3)

Steady

State

S (1,2,3)

N−CHANNEL MOSFET

Power Dissipation

= 25°C

(Note 1)

= 100°C

Continuous Drain

Current R

T = 25°C

T = 100°C

(Notes 1, 2, 3)

MARKING

DIAGRAM

Steady

State

Power Dissipation

T = 25°C

3.6

1.8

520

(Notes 1 & 2)

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

3D8N04

ALLYW

Operating Junction and Storage Temperature

T , T

−55 to

°C

stg

LFPAK4

CASE 760AB

+ 175

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

202

Energy (I

= 5 A)

L(pk)

3D8N04CL = Specific Device Code

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

= Assembly Location

= Wafer Lot

= Year

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

= Work Week

THERMAL RESISTANCE MAXIMUM RATINGS

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Parameter

Symbol

Value

Unit

Junction−to−Case − Steady State

2.7

°C/W

Junction−to−Ambient − Steady State (Note 2)

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

April, 2021 − Rev. 1

NVMYS3D8N04CL/D

12 3 4 5 6 7

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