Datasheet > NVMYS3D8N04CLTWG

NVMYS3D8N04CLTWG

更新时间： 2023-09-03 20:28:38

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	331K
描述
Power MOSFET 40 V, 3.7mΩ, 87 A, Single N-Channel

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NVMYS3D8N04CLTWG 数据手册

NVMYS3D8N04CL

TYPICAL CHARACTERISTICS

= 10 V

10 V to 3.6 V

3.2 V

2.8 V

T = 25°C

T = 125°C

T = −55°C

0.5

1.0

1.5

2.0

2.5

3.0

, DRAIN−TO−SOURCE VOLTAGE (V)

, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

T = 25°C

= 20 A

= 4.5 V

= 10 V

10 20 30 40

50 60 70 80

90 100

, GATE−TO−SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

Figure 3. On−Resistance vs. Gate−to−Source

Figure 4. On−Resistance vs. Drain Current and

Voltage

Gate Voltage

2.0

1.E+05

1.E+04

T = 175°C

1.9

1.8

1.7

1.6

1.5

1.4

1.3

1.2

1.1

1.0

0.9

= 10 V

= 20 A

T = 125°C

1.E+03

1.E+02

1.E+01

T = 85°C

0.8

0.7

−50 −25

100 125 150 175

T , JUNCTION TEMPERATURE (°C)

, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

Figure 6. Drain−to−Source Leakage Current

Temperature

vs. Voltage

www.onsemi.com

1 234 5 6 7

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