Datasheet > NVMYS025N06CLTWG

NVMYS025N06CLTWG

更新时间： 2024-11-12 11:15:11

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	336K
描述
功率 MOSFET，单 N 沟道，60 V，30Ω，20 A

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NVMYS025N06CLTWG 数据手册

NVMYS025N06CL

MOSFET – Power, Single

N-Channel

60 V, 27.5 mW, 21 A

Features

www.onsemi.com

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

MAX

I MAX

(BR)DSS

DS(ON)

• LFPAK4 Package, Industry Standard

27.5 mW @ 10 V

43 mW @ 4.5 V

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

60 V

21 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

D (5)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

G (4)

Continuous Drain

Current R

Steady

State

= 25°C

= 100°C

= 25°C

(Notes 1, 2, 3)

S (1,2,3)

N−CHANNEL MOSFET

Power Dissipation

(Notes 1, 2)

= 100°C

7.6

8.5

6.0

3.8

1.9

103

Continuous Drain

Current R

Steady

State

T = 25°C

MARKING

DIAGRAM

T = 100°C

(Notes 1, 2, 3)

Power Dissipation

T = 25°C

(Notes 1, 2)

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

025N06

AWLYW

Operating Junction and Storage Temperature

Range

T , T

−55 to

+ 175

°C

stg

LFPAK4

CASE 760AB

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

44.6

025N06CL = Specific Device Code

Energy (I

= 1.5 A)

L(pk)

= Assembly Location

= Wafer Lot

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

= Year

= Work Week

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

ORDERING INFORMATION

See detailed ordering, marking and shipping information on

page 5 of this data sheet.

Parameter

Symbol

Value

6.0

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

39.5

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

July, 2019 − Rev. 0

NVMYS025N06CL/D

12 3 4 5 6 7

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与NVMYS025N06CLTWG相关器件

型号	品牌	获取价格	描述	数据表
NVMYS029N08LHTWG	ONSEMI	获取价格	MOSFET - Power, Single N-Channel, 80 V, 29 mΩ
NVMYS1D2N04CLTWG	ONSEMI	获取价格	功率 MOSFET 40 V，1.1 mΩ，258 A，单 N 沟道
NVMYS1D3N04CTWG	ONSEMI	获取价格	功率 MOSFET，单 N 沟道，40 V，1.15Ω，252 A
NVMYS1D6N04CLT1G	ONSEMI	获取价格	Power MOSFET 40V, 1.07 mΩ, 280 A, Single N−Ch
NVMYS1D6N04CLTWG	ONSEMI	获取价格	Power MOSFET 40V, 1.07 mΩ, 280 A, Single N−Ch
NVMYS1D7N04CT1G	ONSEMI	获取价格	Power MOSFET 40V, 1.7 mΩ, 190 A, Single N−Cha
NVMYS1D7N04CTWG	ONSEMI	获取价格	Power MOSFET 40V, 1.7 mΩ, 190 A, Single N−Cha
NVMYS2D1N04CLTWG	ONSEMI	获取价格	功率 MOSFET，40V，2.15Ω，139 A，单 N 沟道
NVMYS2D2N06CLTWG	ONSEMI	获取价格	功率 MOSFET，60 V，2.0Ω，185 A，单 N 沟道
NVMYS2D3N06CTWG	ONSEMI	获取价格	Power MOSFET 60 V, 2.6 mΩ, 176 A, Single N-Ch

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