Datasheet > NVMYS1D6N04CLTWG

NVMYS1D6N04CLTWG

更新时间： 2024-11-22 11:12:55

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	229K
描述
Power MOSFET 40V, 1.07 mΩ, 280 A, Single N−Channel

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NVMYS1D6N04CLTWG 数据手册

DATA SHEET

www.onsemi.com

MOSFET - Power, Single

N-Channel

40 V, 1.6 mW, 185 A

MAX

I MAX

(BR)DSS

DS(ON)

1.6 mW @ 10 V

2.4 mW @ 4.5 V

40 V

185 A

NVMYS1D6N04CL

D (5)

Features

• Low R

to Minimize Conduction Losses

• Low Q and Capacitance to Minimize Driver Losses

DS(on)

• AEC−Q101 Qualified and PPAP Capable

• LFPAK4 Package, Industry Standard

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

G (4)

S (1,2,3)

N−CHANNEL MOSFET

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

MARKING

DIAGRAM

DSS

Gate−to−Source Voltage

Continuous Drain

Current R

Steady

State

= 25°C

= 100°C

= 25°C

185

130.7

107.1

53.6

1D6N04

AWLYW

(Notes 1, 3)

LFPAK4

CASE 760AB

Power Dissipation

(Note 1)

= 100°C

S G

Continuous Drain

Current R

Steady

State

T = 25°C

1D6N04CL = Specific Device Code

T = 100°C

24.8

3.8

(Notes 1, 2, 3)

= Assembly Location

= Wafer Lot

Power Dissipation

T = 25°C

= Year

(Notes 1, 2)

T = 100°C

1.9

= Work Week

Pulsed Drain Current

T = 25°C, t = 10 ms

1198

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

873

Energy (I

= 14.5 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

1.4

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

36.4

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

September, 2021 − Rev. 2

NVMYS1D6N04CL/D

12 3 4 5 6 7

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与NVMYS1D6N04CLTWG相关器件

型号	品牌	获取价格	描述	数据表
NVMYS1D7N04CT1G	ONSEMI	获取价格	Power MOSFET 40V, 1.7 mΩ, 190 A, Single N−Cha
NVMYS1D7N04CTWG	ONSEMI	获取价格	Power MOSFET 40V, 1.7 mΩ, 190 A, Single N−Cha
NVMYS2D1N04CLTWG	ONSEMI	获取价格	功率 MOSFET，40V，2.15Ω，139 A，单 N 沟道
NVMYS2D2N06CLTWG	ONSEMI	获取价格	功率 MOSFET，60 V，2.0Ω，185 A，单 N 沟道
NVMYS2D3N06CTWG	ONSEMI	获取价格	Power MOSFET 60 V, 2.6 mΩ, 176 A, Single N-Ch
NVMYS2D4N04CTWG	ONSEMI	获取价格	功率 MOSFET，40 V，2.4Ω，130 A，单 N 沟道
NVMYS2D9N04CLTWG	ONSEMI	获取价格	功率 MOSFET，40 V，2.8 mΩ，110 A，单 N 沟道
NVMYS3D3N06CLTWG	ONSEMI	获取价格	功率 MOSFET，40 V，3.3Ω，123 A，单 N 沟道
NVMYS3D5N04CTWG	ONSEMI	获取价格	Power MOSFET 40 V, 3.3Ω, 102 A, Single N-Chan
NVMYS3D8N04CLTWG	ONSEMI	获取价格	Power MOSFET 40 V, 3.7mΩ, 87 A, Single N-Chan

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