Datasheet > NVMYS021N10MCLTWG

NVMYS021N10MCLTWG

更新时间： 2024-11-22 11:15:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	219K
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MOSFET – Power, Single N-Channel 100 V, 23 mΩ, 31 A

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DATA SHEET

www.onsemi.com

MOSFET – Power, Single

N-Channel

MAX

I MAX

(BR)DSS

DS(ON)

23 mW @ 10 V

33 mW @ 4.5 V

100 V

31 A

100 V, 23 mW, 31 A

NVMYS021N10MCL

D (5)

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

• Low Q and Capacitance to Minimize Driver Losses

DS(on)

G (4)

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

S (1,2,3)

N−CHANNEL MOSFET

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

MARKING

DIAGRAM

Parameter

Drain−to−Source Voltage

Symbol

Value

100

Unit

DSS

Gate−to−Source Voltage

Continuous Drain

Current R

Steady

State

= 25°C

021N10

MCL

AWLYW

= 100°C

(Notes 1, 3)

LFPAK4

CASE 760AB

Power Dissipation

= 25°C

(Note 1)

= 100°C

Continuous Drain

Current R

Steady

State

T = 25°C

8.4

021N10MCL = Specific Device Code

= Assembly Location

= Wafer Lot

T = 100°C

5.9

(Notes 1, 2, 3)

Power Dissipation

T = 25°C

3.6

1.8

159

= Year

(Notes 1, 2)

= Work Week

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

Range

T , T

−55 to

°C

stg

ORDERING INFORMATION

See detailed ordering, marking and shipping information on

page 5 of this data sheet.

+175

Source Current (Body Diode

Single Pulse Drain−to−Source Avalanche

179

Energy (I

= 1.4 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

3.1

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

June, 2022 − Rev. 0

NVMYS021N10MCL/D

12 3 4 5 6

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与NVMYS021N10MCLTWG相关器件

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NVMYS025N06CLTWG	ONSEMI	获取价格	功率 MOSFET，单 N 沟道，60 V，30Ω，20 A
NVMYS029N08LHTWG	ONSEMI	获取价格	MOSFET - Power, Single N-Channel, 80 V, 29 mΩ
NVMYS1D2N04CLTWG	ONSEMI	获取价格	功率 MOSFET 40 V，1.1 mΩ，258 A，单 N 沟道
NVMYS1D3N04CTWG	ONSEMI	获取价格	功率 MOSFET，单 N 沟道，40 V，1.15Ω，252 A
NVMYS1D6N04CLT1G	ONSEMI	获取价格	Power MOSFET 40V, 1.07 mΩ, 280 A, Single N−Ch
NVMYS1D6N04CLTWG	ONSEMI	获取价格	Power MOSFET 40V, 1.07 mΩ, 280 A, Single N−Ch
NVMYS1D7N04CT1G	ONSEMI	获取价格	Power MOSFET 40V, 1.7 mΩ, 190 A, Single N−Cha
NVMYS1D7N04CTWG	ONSEMI	获取价格	Power MOSFET 40V, 1.7 mΩ, 190 A, Single N−Cha
NVMYS2D1N04CLTWG	ONSEMI	获取价格	功率 MOSFET，40V，2.15Ω，139 A，单 N 沟道
NVMYS2D2N06CLTWG	ONSEMI	获取价格	功率 MOSFET，60 V，2.0Ω，185 A，单 N 沟道

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