Datasheet > NVMYS016N10MCLTWG

NVMYS016N10MCLTWG

更新时间： 2024-11-22 11:15:31

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	222K
描述
MOSFET – Power, Single N-Channel 100 V, 14 mΩ, 46 A

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DATA SHEET

www.onsemi.com

MOSFET – Power, Single

N-Channel

100 V, 14 mW, 46 A

MAX

I MAX

(BR)DSS

DS(ON)

14 mW @ 10 V

20 mW @ 4.5 V

100 V

46 A

NVMYS016N10MCL

D (5)

Features

• Small Footprint (5x6 mm) for Compact Design

G (4)

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free

and are RoHS Compliant

S (1,2,3)

N−CHANNEL MOSFET

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

MARKING

DIAGRAM

Parameter

Drain−to−Source Voltage

Symbol

Value

100

Unit

DSS

Gate−to−Source Voltage

016N10

MCL

AWLYW

Continuous Drain

= 25°C

= 100°C

= 25°C

LFPAK4

CASE 760AB

Current R

(Note 1)

Steady

State

Power Dissipation

(Note 1)

= 100°C

016N10MCL = Specific Device Code

Continuous Drain

Current R

T = 25°C

10.9

7.7

3.6

1.8

264

= Assembly Location

= Wafer Lot

T = 100°C

(Notes 1, 2)

Steady

State

= Year

= Work Week

Power Dissipation

T = 25°C

(Notes 1, 2)

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

ORDERING INFORMATION

See detailed ordering, marking and shipping information on

page 5 of this data sheet.

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

358

Energy (I

= 2.2 A)

L(pk)

Lead Temperature Soldering Reflow for Solder-

ing Purposes (1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Value

2.35

Unit

Junction−to−Case − Steady State (Note 1)

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using 1 in pad size, 2 oz. Cu pad.

Publication Order Number:

June, 2022 − Rev. 1

NVMYS016N10MCL/D

12 3 4 5 6

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与NVMYS016N10MCLTWG相关器件

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NVMYS1D6N04CLTWG	ONSEMI	获取价格	Power MOSFET 40V, 1.07 mΩ, 280 A, Single N−Ch
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