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NVLJWS013N03CLTAG

更新时间： 2024-11-24 11:13:55
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 154K
描述
Single N−Channel µCool™ Power MOSFET 30V, 8.2A, 13mΩ

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NVLJWS013N03CLTAG 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET - Power, Single  
N-Channel  
30 V, 13 mW, 35 A  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
13 mW @ 10 V  
18 mW @ 4.5 V  
30 V  
35 A  
NVLJWS013N03CL  
ELECTRICAL CONNECTION  
D
Features  
• Small Footprint for Compact Design  
• Low R  
to Minimize Conduction Losses  
• Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
G
G
• Wettable Flank Option for Enhanced Optical Inspection  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free and are RoHS Compliant  
S
N−CHANNEL MOSFET  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
30  
Unit  
V
MARKING  
DIAGRAM  
V
DSS  
Gate−to−Source Voltage  
V
GS  
20  
V
XXXX  
ALYW  
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
35  
A
C
D
q
JC  
WDFNW6 (2.05x2.05)  
CASE 515AD  
T
C
25  
(Notes 1, 3)  
Steady  
State  
Power Dissipation  
T
C
P
27  
W
A
D
XXXX = Specific Device Code  
R
(Note 1)  
q
JC  
T
C
= 100°C  
13  
A
L
Y
W
= Assembly Location  
= Wafer Lot  
= Year  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
10  
q
JA  
= Work Week  
T = 100°C  
A
7
(Notes 1, 2, 3)  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
2.4  
1.2  
116  
W
D
R
(Notes 1, 2)  
q
JA  
T = 100°C  
A
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
+175  
°C  
J
stg  
Source Current (Body Diode)  
I
22  
29  
A
S
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (I  
= 2.2 A)  
L(pk)  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
5.6  
Unit  
Junction−to−Case − Steady State  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
JC  
R
63  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2021  
1
Publication Order Number:  
June, 2022 − Rev. 1  
NVLJWS013N03CL/D  
 
1234567

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