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NVLUS4C12NTAG PDF预览

NVLUS4C12NTAG

更新时间： 2024-11-24 01:21:59
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 89K
描述
Single N-Channel Power MOSFET

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NVLUS4C12NTAG 数据手册

 浏览型号NVLUS4C12NTAG的Datasheet PDF文件第2页浏览型号NVLUS4C12NTAG的Datasheet PDF文件第3页浏览型号NVLUS4C12NTAG的Datasheet PDF文件第4页浏览型号NVLUS4C12NTAG的Datasheet PDF文件第5页浏览型号NVLUS4C12NTAG的Datasheet PDF文件第6页 
NVLUS4C12N  
Power MOSFET  
30 V, 10.7 A, Single N−Channel,  
2.0x2.0x0.55 mm mCoolt UDFN6 Package  
Features  
• Low Profile UDFN 2.0 x 2.0 x 0.55 mm for Board Space Saving with  
Exposed Drain Pads for Excellent Thermal Conduction  
www.onsemi.com  
MOSFET  
• Ultra Low R  
to Reduce Conduction Losses  
DS(on)  
• Optimized Gate Charge to Reduce Switching Losses  
• Low Capacitance to Minimize Driver Losses  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
9 mW @ 10 V  
12 mW @ 4.5 V  
15 mW @ 3.7 V  
19 mW @ 3.3 V  
• NV Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable  
30 V  
10.7 A  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
D
Applications  
• Power Load Switch  
• Synch DC−DC Converters  
• Wireless Charging Circuit  
G
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
S
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Symbol  
Value  
30  
Unit  
V
N−CHANNEL MOSFET  
V
DSS  
V
GS  
20  
V
S
MARKING DIAGRAM  
Continuous Drain  
Current (Note 1)  
Steady  
State  
T = 25°C  
I
D
10.7  
7.7  
A
D
A
1
UDFN6  
T = 85°C  
A
AGMG  
(mCOOL])  
G
CASE 517BG  
t ≤ 5 s  
T = 25°C  
A
15.1  
1.54  
Pin 1  
AG = Specific Device Code  
M = Date Code  
Power Dissipa-  
tion (Note 1)  
Steady  
State  
T = 25°C  
A
P
D
W
A
G
= Pb−Free Package  
t ≤ 5 s  
T = 25°C  
A
3.1  
6.8  
4.9  
0.63  
43  
(Note: Microdot may be in either location)  
Continuous Drain  
Current (Note 2)  
Steady  
State  
T = 25°C  
A
I
D
T = 85°C  
A
PIN CONNECTIONS  
Power Dissipation (Note 2)  
Pulsed Drain Current  
T = 25°C  
A
P
D
W
A
t = 10 ms  
p
I
DM  
D
D
G
1
2
3
6
5
4
D
D
S
MOSFET Operating Junction and Storage  
Temperature  
T ,  
-55 to  
150  
°C  
J
T
STG  
D
Source Current (Body Diode) (Note 1)  
I
S
1.55  
260  
A
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
°C  
S
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq  
[2 oz] including traces).  
(Top View)  
2. Surface-mounted on FR4 board using the minimum recommended pad size,  
2 oz. Cu.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
December, 2014 − Rev. 0  
NVLUS4C12N/D  
 
123456

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