DATA SHEET
www.onsemi.com
MOSFET – Power, Dual
N-Channel
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
23 mW @ 10 V
33 mW @ 4.5 V
40 V
25 A
40 V, 23 mW, 25 A
NVLJWD023N04CL
ELECTRICAL CONNECTION
D1
D2
Features
• Small Footprint for Compact Design
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
G1
G2
G
• Wettable Flank Option for Enhanced Optical Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
S1
S2
Dual N−Channel MOSFET
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
S1
G1
D2
D2
Parameter
Drain−to−Source Voltage
Symbol
Value
40
20
25
18
24
12
7
Unit
V
D1
MARKING
DIAGRAM
V
DSS
D1
Gate−to−Source Voltage
V
GS
V
G2
S2
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
D
A
023N
ALYW
C
WDFNW6 (2.2x2.3)
CASE 515AS
q
JC
T
C
(Notes 1, 3)
Steady
State
Power Dissipation
T
C
P
D
W
A
023N = Specific Device Code
R
(Note 1)
q
JC
T
C
= 100°C
A
L
Y
W
= Assembly Location
= Wafer Lot
= Year
Continuous Drain
Current R
T = 25°C
A
I
D
q
JA
= Work Week
T = 100°C
A
5
(Notes 1, 2, 3)
Steady
State
Power Dissipation
T = 25°C
A
P
D
2
W
R
(Notes 1, 2)
q
JA
T = 100°C
A
1
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
104
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
20
25
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 1.5 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
6.3
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
74
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
January, 2023 − Rev. 1
NVLJWD023N04CL/D