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NVLJWD023N04CLTAG PDF预览

NVLJWD023N04CLTAG

更新时间: 2024-12-01 11:15:15
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安森美 - ONSEMI /
页数 文件大小 规格书
7页 135K
描述
Single N−Channel µCool™ Power MOSFET 40V 25A 23mΩ

NVLJWD023N04CLTAG 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET – Power, Dual  
N-Channel  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
23 mW @ 10 V  
33 mW @ 4.5 V  
40 V  
25 A  
40 V, 23 mW, 25 A  
NVLJWD023N04CL  
ELECTRICAL CONNECTION  
D1  
D2  
Features  
Small Footprint for Compact Design  
Low R  
to Minimize Conduction Losses  
Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
G1  
G2  
G
Wettable Flank Option for Enhanced Optical Inspection  
AECQ101 Qualified and PPAP Capable  
These Devices are PbFree and are RoHS Compliant  
S1  
S2  
Dual NChannel MOSFET  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
S1  
G1  
D2  
D2  
Parameter  
DraintoSource Voltage  
Symbol  
Value  
40  
20  
25  
18  
24  
12  
7
Unit  
V
D1  
MARKING  
DIAGRAM  
V
DSS  
D1  
GatetoSource Voltage  
V
GS  
V
G2  
S2  
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
D
A
023N  
ALYW  
C
WDFNW6 (2.2x2.3)  
CASE 515AS  
q
JC  
T
C
(Notes 1, 3)  
Steady  
State  
Power Dissipation  
T
C
P
D
W
A
023N = Specific Device Code  
R
(Note 1)  
q
JC  
T
C
= 100°C  
A
L
Y
W
= Assembly Location  
= Wafer Lot  
= Year  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
q
JA  
= Work Week  
T = 100°C  
A
5
(Notes 1, 2, 3)  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
D
2
W
R
(Notes 1, 2)  
q
JA  
T = 100°C  
A
1
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
104  
A
A
p
Operating Junction and Storage Temperature  
Range  
T , T  
55 to  
+175  
°C  
J
stg  
Source Current (Body Diode)  
I
20  
25  
A
S
Single Pulse DraintoSource Avalanche  
E
AS  
mJ  
Energy (I  
= 1.5 A)  
L(pk)  
Lead Temperature for Soldering Purposes  
(1/8from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
6.3  
Unit  
JunctiontoCase Steady State  
JunctiontoAmbient Steady State (Note 2)  
R
°C/W  
q
JC  
R
74  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2022  
1
Publication Order Number:  
January, 2023 Rev. 1  
NVLJWD023N04CL/D  
 

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