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NVB6412AN PDF预览

NVB6412AN

更新时间: 2024-11-06 11:58:47
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 147K
描述
N-Channel Power MOSFET

NVB6412AN 数据手册

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NTB6412AN, NTP6412AN,  
NVB6412AN  
N-Channel Power MOSFET  
100 V, 58 A, 18.2 mW  
Features  
Low R  
DS(on)  
http://onsemi.com  
High Current Capability  
100% Avalanche Tested  
I
D
MAX  
V
R
DS(ON)  
MAX  
(Note 1)  
NVB Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AECQ101  
Qualified and PPAP Capable  
(BR)DSS  
100 V  
18.2 mW @ 10 V  
58 A  
These Devices are PbFree and are RoHS Compliant  
NChannel  
D
MAXIMUM RATINGS (T = 25°C Unless otherwise specified)  
J
Parameter  
DraintoSource Voltage  
GatetoSource Voltage Continuous  
Symbol Value  
Unit  
V
V
100  
$20  
58  
DSS  
G
V
V
GS  
Continuous Drain Cur- Steady  
T
= 25°C  
= 100°C  
= 25°C  
I
D
A
C
rent R  
State  
q
JC  
S
T
C
41  
4
Power Dissipation  
R
Steady  
State  
T
C
P
167  
W
D
q
JC  
4
Pulsed Drain Current  
t = 10 ms  
p
I
240  
A
DM  
1
2
Operating Junction and Storage Temperature  
Range  
T , T  
55 to  
+175  
°C  
J
stg  
3
Source Current (Body Diode)  
I
S
58  
A
2
TO220AB  
D PAK  
CASE 221A  
STYLE 5  
CASE 418B  
STYLE 2  
Single Pulse DraintoSource Avalanche  
E
300  
mJ  
AS  
1
Energy (V = 50 Vdc, V = 10 Vdc,  
DD  
GS  
2
I
= 44.7 A, L = 0.3 mH, R = 25 W)  
3
L(pk)  
G
Lead Temperature for Soldering  
T
260  
°C  
L
MARKING DIAGRAM  
& PIN ASSIGNMENT  
Purposes, 1/8from Case for 10 Seconds  
4
THERMAL RESISTANCE RATINGS  
Parameter  
4
Drain  
Drain  
Symbol  
Max  
0.9  
33  
Unit  
JunctiontoCase (Drain) Steady State  
JunctiontoAmbient (Note 1)  
R
q
°C/W  
JC  
NTB  
R
q
JA  
NTP  
6412ANG  
AYWW  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface mounted on FR4 board using 1 sq in pad size,  
6412ANG  
AYWW  
2
1
Gate  
3
1
Gate  
3
Drain  
Source  
Source  
(Cu Area 1.127 sq in [2 oz] including traces).  
2
6412AN = Specific Device Code  
Drain  
G
A
Y
= PbFree Device  
= Assembly Location  
= Year  
WW = Work Week  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
January, 2012 Rev. 1  
NTB6412AN/D  
 

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