NTB6412AN, NTP6412AN,
NVB6412AN
N-Channel Power MOSFET
100 V, 58 A, 18.2 mW
Features
• Low R
DS(on)
http://onsemi.com
• High Current Capability
• 100% Avalanche Tested
I
D
MAX
V
R
DS(ON)
MAX
(Note 1)
• NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
(BR)DSS
100 V
18.2 mW @ 10 V
58 A
• These Devices are Pb−Free and are RoHS Compliant
N−Channel
D
MAXIMUM RATINGS (T = 25°C Unless otherwise specified)
J
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Symbol Value
Unit
V
V
100
$20
58
DSS
G
V
V
GS
Continuous Drain Cur- Steady
T
= 25°C
= 100°C
= 25°C
I
D
A
C
rent R
State
q
JC
S
T
C
41
4
Power Dissipation
R
Steady
State
T
C
P
167
W
D
q
JC
4
Pulsed Drain Current
t = 10 ms
p
I
240
A
DM
1
2
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
3
Source Current (Body Diode)
I
S
58
A
2
TO−220AB
D PAK
CASE 221A
STYLE 5
CASE 418B
STYLE 2
Single Pulse Drain−to−Source Avalanche
E
300
mJ
AS
1
Energy (V = 50 Vdc, V = 10 Vdc,
DD
GS
2
I
= 44.7 A, L = 0.3 mH, R = 25 W)
3
L(pk)
G
Lead Temperature for Soldering
T
260
°C
L
MARKING DIAGRAM
& PIN ASSIGNMENT
Purposes, 1/8″ from Case for 10 Seconds
4
THERMAL RESISTANCE RATINGS
Parameter
4
Drain
Drain
Symbol
Max
0.9
33
Unit
Junction−to−Case (Drain) Steady State
Junction−to−Ambient (Note 1)
R
q
°C/W
JC
NTB
R
q
JA
NTP
6412ANG
AYWW
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
6412ANG
AYWW
2
1
Gate
3
1
Gate
3
Drain
Source
Source
(Cu Area 1.127 sq in [2 oz] including traces).
2
6412AN = Specific Device Code
Drain
G
A
Y
= Pb−Free Device
= Assembly Location
= Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
January, 2012 − Rev. 1
NTB6412AN/D