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NUP4212UPMUTAG

更新时间： 2024-11-04 06:00:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 134K
描述
Quad Transient Voltage Suppressor Array

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中文翻译

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NUP4212UPMUTAG 技术参数

是否无铅： 不含铅生命周期：End Of Life
零件包装代码：DFN包装说明：S-PDSO-N6
针数：6Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
Factory Lead Time：1 week风险等级：5.77
Samacsys Description：ESD Suppressors / TVS Diodes ULTR LO CAPACITANCE ESD PRTCT ARRAY其他特性：EXCELLENT CLAMPING CAPABILITY
最小击穿电压：5.2 V击穿电压标称值：15 V
外壳连接：ANODE配置：COMMON ANODE, 6 ELEMENTS
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：S-PDSO-N6JESD-609代码：e3
湿度敏感等级：1元件数量：6
端子数量：6最高工作温度：125 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装形状：SQUARE封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
认证状态：Not Qualified最大重复峰值反向电压：4 V
子类别：Transient Suppressors表面贴装：YES
技术：AVALANCHE端子面层：Tin (Sn)
端子形式：NO LEAD端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED

NUP4212UPMUTAG 数据手册

 浏览型号NUP4212UPMUTAG的Datasheet PDF文件第2页浏览型号NUP4212UPMUTAG的Datasheet PDF文件第3页浏览型号NUP4212UPMUTAG的Datasheet PDF文件第4页 
NUP4212UPMU  
Quad Transient Voltage  
Suppressor Array  
ESD Protection Diodes with Ultra−Low  
(0.7 pF) Capacitance  
http://onsemi.com  
The four−line voltage transient suppressor array is designed to protect  
voltage−sensitive components that require ultra−low capacitance from  
ESD and transient voltage events. This device features a common anode  
design which can protect up to four independent high speed data lines  
and 1 or 2 separate 15 V TVS lines in a single six−lead UDFN low  
profile package.  
D
D
D
D
V
1
V
2
1
2
3
4
Excellent clamping capability, low capacitance, low leakage, and fast  
response time make these parts ideal for ESD protection on designs  
where board space is at a premium. Because of its low capacitance, it is  
suited for use in high frequency designs such as a USB 2.0 high speed.  
This device can be configured as a dual port USB device.  
MARKING  
DIAGRAM  
Features  
• Low Capacitance Data Lines (0.7 pF Typical)  
1
• Protects up to Four Data Lines Plus a V Pin  
UDFN6 1.6 X 1.6  
MU SUFFIX  
CASE 517AP  
CC  
6
P2 MG  
• UDFN Package, 1.6 x 1.6 mm  
G
1
• Low Profile of 0.50 mm for Ultra Slim Design  
P2  
M
G
= Specific Device Code  
= Date Code  
= Pb−Free Package  
• V , V Pin = 15 V Protection  
1
2
• D , D , D , and D Pins = 5.2 V Minimum Protection  
1
2
3
4
• ESD Rating: IEC61000−4−2: Level 4  
(Note: Microdot may be in either location)  
− Contact (14 kV)  
• This is a Pb−Free Device  
PIN CONNECTIONS  
Typical Applications  
• USB 2.0 High−Speed Interface  
• Cell Phones  
• MP3 Players  
• SIM Card Protection  
6
5
4
V
D
D
D
1
2
3
2
1
2
3
GND  
V
1
4
D
MAXIMUM RATINGS (T = 25°C, unless otherwise specified)  
J
Symbol  
Rating  
Value  
−40 to 125  
−55 to 150  
260  
Unit  
°C  
ORDERING INFORMATION  
T
T
T
Operating Junction Temperature Range  
Storage Temperature Range  
J
°C  
†
STG  
L
Device  
Package  
Shipping  
Lead Solder Temperature – Maximum  
(10 seconds)  
°C  
NUP4212UPMUTAG UDFN6 3000/Tape & Reel  
(Pb−Free)  
ESD  
IEC 61000−4−2 Contact  
14000  
V
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
See Application Note AND8308/D for further description of survivability specs.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
August, 2009− Rev. 1  
NUP4212UPMU/D  
1234

中文翻译

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