Datasheet > NUP4212UPMU

NUP4212UPMU

更新时间： 2024-11-23 06:00:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	134K
描述
Quad Transient Voltage Suppressor Array

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中文翻译

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NUP4212UPMU 数据手册

NUP4212UPMU

Quad Transient Voltage

Suppressor Array

ESD Protection Diodes with Ultra−Low

(0.7 pF) Capacitance

http://onsemi.com

The four−line voltage transient suppressor array is designed to protect

voltage−sensitive components that require ultra−low capacitance from

ESD and transient voltage events. This device features a common anode

design which can protect up to four independent high speed data lines

and 1 or 2 separate 15 V TVS lines in a single six−lead UDFN low

profile package.

Excellent clamping capability, low capacitance, low leakage, and fast

response time make these parts ideal for ESD protection on designs

where board space is at a premium. Because of its low capacitance, it is

suited for use in high frequency designs such as a USB 2.0 high speed.

This device can be configured as a dual port USB device.

MARKING

DIAGRAM

Features

• Low Capacitance Data Lines (0.7 pF Typical)

• Protects up to Four Data Lines Plus a V Pin

UDFN6 1.6 X 1.6

MU SUFFIX

CASE 517AP

P2 MG

• UDFN Package, 1.6 x 1.6 mm

• Low Profile of 0.50 mm for Ultra Slim Design

= Specific Device Code

= Date Code

= Pb−Free Package

• V , V Pin = 15 V Protection

• D , D , D , and D Pins = 5.2 V Minimum Protection

• ESD Rating: IEC61000−4−2: Level 4

(Note: Microdot may be in either location)

− Contact (14 kV)

• This is a Pb−Free Device

PIN CONNECTIONS

Typical Applications

• USB 2.0 High−Speed Interface

• Cell Phones

• MP3 Players

• SIM Card Protection

GND

MAXIMUM RATINGS (T = 25°C, unless otherwise specified)

Symbol

Rating

Value

−40 to 125

−55 to 150

260

Unit

°C

ORDERING INFORMATION

Operating Junction Temperature Range

Storage Temperature Range

°C

†

STG

Device

Package

Shipping

Lead Solder Temperature – Maximum

(10 seconds)

°C

NUP4212UPMUTAG UDFN6 3000/Tape & Reel

(Pb−Free)

ESD

IEC 61000−4−2 Contact

14000

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

See Application Note AND8308/D for further description of survivability specs.

Publication Order Number:

August, 2009− Rev. 1

NUP4212UPMU/D

12 3 4

中文翻译

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与NUP4212UPMU相关器件

型号	品牌	获取价格	描述	数据表
NUP4212UPMUTAG	ONSEMI	获取价格	Quad Transient Voltage Suppressor Array
NUP4301	ONSEMI	获取价格	Low cap. diode array for 2 Line High Speed USB protection devic
NUP4301MR6T1	ONSEMI	获取价格	Low Capacitance Diode Array for ESD Protection in Four Data Lines
NUP4301MR6T1/D	ONSEMI	获取价格	Low Capacitance Diode Array for ESD Protection in Four Data Lines
NUP4301MR6T1_05	ONSEMI	获取价格	Low Capacitance Diode Array for ESD Protection in Four Data Lines
NUP4301MR6T1G	ONSEMI	获取价格	Integrated Solutions for USB Line Protection and Termination
NUP4302MR6	ONSEMI	获取价格	Schottky Diode Array for Four Data Line ESD Protection
NUP4302MR6_06	ONSEMI	获取价格	Schottky Diode Array for Four Data Line ESD Protection
NUP4302MR6T1	ONSEMI	获取价格	Schottky Diode Array for Four Data Line ESD Protection
NUP4302MR6T1G	ONSEMI	获取价格	Schottky Diode Array for Four Data Line ESD Protection

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