NTLJD2105L

更新时间： 2024-09-24 03:27:23

品牌	Logo	应用领域
安森美 - ONSEMI		开关高压
页数	文件大小	规格书
6页	101K
描述
POWER MOSFET 8 V, 4.3 A, uCool High Side Load Switch with Level Shift, 2x2 mm WDFN Package

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NTLJD2105L 数据手册

NTLJD2105L

POWER MOSFET

8 V, 4.3 A, mCool] High Side Load Switch

with Level Shift, 2x2 mm WDFN Package

Features

• WDFN 2x2 mm Package with Exposed Drain Pads Offers Excellent

http://onsemi.com

Thermal Performance

• Low R

P−Channel Load Switch with N−channel MOSFET for

DS(on)

Level Shift

MAX

I MAX

INMAX

DS(on)

50 mW @ 4.5 V

60 mW @ 2.5 V

• N Channel Operated at 1.5 V Gate Drive Voltage Level

• P Channel Operated at 1.5 V Supply Voltage

• Same Footprint as SC88

20 V

4.3 A

80 mW @ 1.8 V

115 mW @ 1.5 V

• Low Profile (<0.8 mm) Allows it to Fit Easily into Extremely Thin

Environments

2, 3

• ESD Protection

• These are Pb−Free Devices

Applications

• High Slide Load Switch with Level Shift

• Optimized for Power Management in Ultra Portable Equipment

MOSFET(Q2) MAXIMUM RATINGS

(T = 25°C unless otherwise stated)

Parameter

Q2 Input Voltage (V , P−Channel)

Symbol

Value

Unit

MARKING

DIAGRAM

Q1 On/Off Voltage (V , N−Channel)

ON/OFF

Continuous Load

Current (Note 1)

T = 25°C

4.3

3.1

1.56

Pin 1

JN M

Steady

State

T = 85°C

WDFN6

CASE 506AZ

Power Dissipation

(Note 1)

Steady

State

T = 25°C

JN = Specific Device Code

= Date Code

Continuous Load

Current (Note 2)

T = 25°C

2.5

1.8

= Pb−Free Package

T = 85°C

Steady

State

Power Dissipation

(Note 2)

T = 25°C

0.52

PIN CONNECTIONS

Pulsed Load

Current

t = 10 ms

Operating Junction and Storage

Temperature

T ,

−55 to

150

°C

D1/G2

STG

Source Current (Body Diode) (Note 2)

−2.7

260

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

°C

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq

[2 oz] including traces)

2. Surface−mounted on FR4 board using the minimum recommended pad size.

(Top View)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

November, 2006 − Rev. 0

NTLJD2105L/D

12 3 4 5 6

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与NTLJD2105L相关器件

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NTLJD2105LTBG	ONSEMI	获取价格	POWER MOSFET 8 V, 4.3 A, uCool High Side Load Switch with Level Shift, 2x2 mm WDFN Package
NTLJD3115P	ONSEMI	获取价格	Power MOSFET
NTLJD3115PT1G	ONSEMI	获取价格	Power MOSFET
NTLJD3115PTAG	ONSEMI	获取价格	Power MOSFET
NTLJD3119C	ONSEMI	获取价格	Power MOSFET 20 V/−20 V, 4.6 A/−4.1 A, uCool Complementary, 2x2 mm, WDFN Packa
NTLJD3119CTAG	ONSEMI	获取价格	Power MOSFET 20 V/−20 V, 4.6 A/−4.1 A, uCool Complementary, 2x2 mm, WDFN Packa
NTLJD3119CTBG	ONSEMI	获取价格	Power MOSFET 20 V/−20 V, 4.6 A/−4.1 A, uCool Complementary, 2x2 mm, WDFN Packa
NTLJD3181PZ	ONSEMI	获取价格	Power MOSFET −20 V, −4.0 A, Cool Dual P−Channel, ESD, 2x2 mm WDFN Pack
NTLJD3181PZTAG	ONSEMI	获取价格	Power MOSFET −20 V, −4.0 A, Cool Dual P−Channel, ESD, 2x2 mm WDFN Pack
NTLJD3181PZTBG	ONSEMI	获取价格	Power MOSFET −20 V, −4.0 A, Cool Dual P−Channel, ESD, 2x2 mm WDFN Pack

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