是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | CASE 418AA-01, D2PAK-3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.18 | Is Samacsys: | N |
雪崩能效等级(Eas): | 722 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 74 A | 最大漏源导通电阻: | 0.0093 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e0 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 235 | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 175 A | 认证状态: | COMMERCIAL |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NTB4302T4G | ONSEMI |
获取价格 |
Power MOSFET 74 Amps, 30 Volts N-Channel D2PAK, D2PAK 2 LEAD, 800-REEL | |
NTB4302T4G | ROCHESTER |
获取价格 |
74A, 30V, 0.0093ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 418AA-01, D2PAK-3 | |
NTB45N06 | ONSEMI |
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Power MOSFET 45 Amps, 60 Volts | |
NTB45N06G | ONSEMI |
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单 N 沟道功率 MOSFET 60V,45A,26mΩ | |
NTB45N06L | ONSEMI |
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45 Amps, 60 Volts, Logic Level, N−Channel TO−220 and D2PAK | |
NTB45N06LG | ONSEMI |
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45 Amps, 60 Volts, Logic Level, N−Channel TO−220 and D2PAK | |
NTB45N06LT4 | ONSEMI |
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45 Amps, 60 Volts, Logic Level, N−Channel TO−220 and D2PAK | |
NTB45N06LT4G | ONSEMI |
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45 Amps, 60 Volts, Logic Level, N−Channel TO−220 and D2PAK | |
NTB45N06T4 | ONSEMI |
获取价格 |
Power MOSFET 45 Amps, 60 Volts | |
NTB45N06T4G | ONSEMI |
获取价格 |
Power MOSFET 45 Amps, 60 Volts |