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NSVMMBD353LT1G PDF预览

NSVMMBD353LT1G

更新时间： 2024-12-01 01:11:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
3页 127K
描述
Dual Hot Carrier Mixer Diodes

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NSVMMBD353LT1G 数据手册

 浏览型号NSVMMBD353LT1G的Datasheet PDF文件第2页浏览型号NSVMMBD353LT1G的Datasheet PDF文件第3页 
MMBD352WT1G,  
NSVMMBD352WT1G  
Dual Schottky Barrier Diode  
These devices are designed primarily for UHF mixer applications  
but are suitable also for use in detector and ultra−fast switching  
circuits.  
http://onsemi.com  
Features  
Very Low Capacitance − Less Than 1.0 pF @ 0 V  
Low Forward Voltage − 0.5 V (Typ) @ I = 10 mA  
F
AEC Qualified and PPAP Capable  
SOT−323 (SC−70)  
CASE 419  
NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements  
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant*  
STYLE 9  
1
2
ANODE  
CATHODE  
3
CATHODE/ANODE  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
MARKING DIAGRAM  
Continuous Reverse Voltage  
V
R
7.0  
V
CC  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
M5 MG  
G
1
THERMAL CHARACTERISTICS  
M5  
M
G
= Specific Device Code  
= Date Code  
= Pb−Free Package  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR−5 Board  
P
D
(Note 1)  
(Note: Microdot may be in either location)  
T = 25C  
Derate above 25C  
200  
1.6  
mW  
mW/C  
A
ORDERING INFORMATION  
Thermal Resistance,  
Junction−to−Ambient  
R
625  
C/W  
q
JA  
†
Device  
Package  
Shipping  
Total Device Dissipation Alumina  
Substrate (Note 2)  
P
D
MMBD352WT1G  
SOT−323  
(Pb−Free) Tape & Reel  
3,000 /  
T = 25C  
300  
2.4  
mW  
mW/C  
A
Derate above 25C  
NSVMMBD352WT1G SOT−323 3,000 /  
(Pb−Free) Tape & Reel  
Thermal Resistance,  
R
C/W  
C  
q
JA  
Junction−to−Ambient  
417  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Junction and Storage Temperature  
T , T  
J
−55 to +150  
stg  
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.  
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
November, 2011 − Rev. 5  
MMBD352WT1/D  
 
123

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