5秒后页面跳转
捷配首页

Datasheet > NSS20201MR6T1G_06
NSS20201MR6T1G_06 PDF预览

NSS20201MR6T1G_06

更新时间： 2024-10-01 03:45:55
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
4页 48K
描述
20 V, 3 A, Low VCE(sat) NPN Transistor

阅读下载

中文翻译

获取价格

NSS20201MR6T1G_06 数据手册

 浏览型号NSS20201MR6T1G_06的Datasheet PDF文件第2页浏览型号NSS20201MR6T1G_06的Datasheet PDF文件第3页浏览型号NSS20201MR6T1G_06的Datasheet PDF文件第4页 
NSS20201MR6T1G  
20 V, 3 A, Low VCE(sat)  
NPN Transistor  
2
ON Semiconductor’s e PowerEdge family of low V  
CE(sat)  
transistors are miniature surface mount devices featuring ultra low  
saturation voltage (V ) and high current gain capability. These  
are designed for use in low voltage, high speed switching applications  
where affordable efficient energy control is important.  
CE(sat)  
http://onsemi.com  
20 VOLTS  
3.0 AMPS  
NPN LOW VCE(sat) TRANSISTOR  
EQUIVALENT RDS(on) 100 mW  
Typical application are DC−DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
cluster. The high current gain allows e PowerEdge devices to be  
driven directly from PMU’s control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
COLLECTOR  
1, 2, 5, 6  
2
3
BASE  
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Symbol  
Max  
20  
Unit  
V
4
EMITTER  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
V
CEO  
V
CBO  
V
EBO  
40  
V
5.0  
2.0  
3.0  
V
4
5
6
Collector Current − Continuous  
Collector Current − Peak  
I
A
C
3
I
A
2
1
CM  
THERMAL CHARACTERISTICS  
Characteristic  
CASE 318G  
TSOP−6  
STYLE 6  
Symbol  
Max  
Unit  
Total Device Dissipation  
P
(Note 1)  
460  
mW  
D
T = 25°C  
A
Derate above 25°C  
3.7  
mW/°C  
°C/W  
DEVICE MARKING  
Thermal Resistance,  
Junction−to−Ambient  
R
q
JA  
(Note 1)  
272  
VS0 MG  
Total Device Dissipation  
P
(Note 2)  
(Note 2)  
780  
mW  
D
G
T = 25°C  
A
Derate above 25°C  
6.3  
mW/°C  
°C/W  
Thermal Resistance,  
Junction−to−Ambient  
R
q
160  
JA  
VS0 = Specific Device Code  
M
= Date Code  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
Thermal Resistance,  
Junction−to−Lead #1  
R
(Note 1)  
(Note 2)  
48  
40  
°C/W  
°C/W  
q
JL  
JL  
R
q
Total Device Dissipation  
(Single Pulse < 10 s)  
P
1.5  
W
Dsingle  
(Note 2)  
ORDERING INFORMATION  
Junction and Storage  
Temperature Range  
T , T  
−55 to  
+150  
°C  
†
J
stg  
Device  
Package  
Shipping  
NSS20201MR6T1G TSOP−6 3000/Tape & Reel  
(Pb−Free)  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. FR−4 @ 100 mm2, 2 oz copper traces.  
2. FR−4 @ 500 mm2, 2 oz copper traces.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 0  
NSS20201MR6/D  
 
1234

中文翻译

下载PDF

与NSS20201MR6T1G_06相关器件

型号 品牌 获取价格 描述 数据表
NSS20300MR6T1G ONSEMI

获取价格

 		PNP Transistor
NSS20300MR6T1G_07 ONSEMI

获取价格

 		20 V, 5 A, Low VCE(sat) PNP Transistor
NSS20500UW3 ONSEMI

获取价格

 		PNP Transistor
NSS20500UW3T2G ONSEMI

获取价格

 		20 V, 7.0 A, Low VCE(sat) PNP Transistor
NSS20500UW3T2G_07 ONSEMI

获取价格

 		20 V, 7.0 A, Low VCE(sat) PNP Transistor
NSS20500UW3TBG ONSEMI

获取价格

 		PNP Transistor
NSS20501UW3 ONSEMI

获取价格

 		NPN Transistor
NSS20501UW3T2G ONSEMI

获取价格

 		20 V, 7.0 A, Low VCE(sat) NPN Transistor
NSS20501UW3TBG ONSEMI

获取价格

 		NPN Transistor
NSS20600CF8T1G ONSEMI

获取价格

 		20 V, 7.0 A, Low VCE(sat) PNP Transistor

与NSS20201MR6T1G_06相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证