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NSS20501UW3TBG

更新时间： 2024-01-15 15:29:52
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 108K
描述
NPN Transistor

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中文翻译

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NSS20501UW3TBG 技术参数

是否无铅： 不含铅生命周期：Active
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：6 weeks
风险等级：5.74最大集电极电流 (IC)：5 A
配置：Single最小直流电流增益 (hFE)：180
JESD-609代码：e3湿度敏感等级：1
最高工作温度：150 °C极性/信道类型：NPN
最大功率耗散 (Abs)：1.5 W子类别：Other Transistors
表面贴装：YES端子面层：Tin (Sn)
标称过渡频率 (fT)：150 MHzBase Number Matches：1

NSS20501UW3TBG 数据手册

 浏览型号NSS20501UW3TBG的Datasheet PDF文件第2页浏览型号NSS20501UW3TBG的Datasheet PDF文件第3页浏览型号NSS20501UW3TBG的Datasheet PDF文件第4页浏览型号NSS20501UW3TBG的Datasheet PDF文件第5页 
NSS20501UW3  
20 V, 7.0 A, Low VCE(sat)  
NPN Transistor  
2
ON Semiconductor’s e PowerEdge family of low V  
CE(sat)  
transistors are miniature surface mount devices featuring ultra low  
saturation voltage (V ) and high current gain capability. These  
CE(sat)  
http://onsemi.com  
are designed for use in low voltage, high speed switching applications  
where affordable efficient energy control is important.  
20 VOLTS, 7.0 AMPS  
NPN LOW VCE(sat) TRANSISTOR  
EQUIVALENT RDS(on) 31 mW  
Typical applications are DC−DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
COLLECTOR  
3
2
cluster. The high current gain allows e PowerEdge devices to be  
driven directly from PMU’s control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
1
BASE  
Features  
• This is a Pb−Free Device  
2
EMITTER  
MAXIMUM RATINGS (T = 25°C)  
A
3
Rating  
Symbol  
Max  
20  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
A
WDFN3  
CASE 506AU  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
V
CEO  
2
1
V
CBO  
V
EBO  
20  
6.0  
5.0  
7.0  
MARKING DIAGRAM  
Collector Current − Continuous  
Collector Current − Peak  
Electrostatic Discharge  
I
C
VD M G  
I
CM  
G
ESD  
HBM Class 3B  
MM Class C  
1
THERMAL CHARACTERISTICS  
Characteristic  
VD = Specific Device Code  
M
= Date Code  
Symbol  
Max  
Unit  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
Total Device Dissipation, T = 25°C  
P
(Note 1)  
875  
7.0  
mW  
mW/°C  
A
D
Derate above 25°C  
Thermal Resistance,  
Junction−to−Ambient  
R
(Note 1)  
143  
°C/W  
q
JA  
ORDERING INFORMATION  
Total Device Dissipation, T = 25°C  
P
(Note 2)  
(Note 2)  
1.5  
W
†
A
D
Device  
Package  
Shipping  
Derate above 25°C  
11.8  
mW/°C  
NSS20501UW3T2G  
WDFN3  
(Pb−Free)  
3000/  
Thermal Resistance,  
Junction−to−Ambient  
R
85  
°C/W  
°C/W  
°C  
q
JA  
Tape & Reel  
NSS20501UW3TBG  
WDFN3  
(Pb−Free)  
3000/  
Thermal Resistance,  
Junction−to−Lead #3  
R
(Note 2)  
JL  
23  
q
Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Junction and Storage  
Temperature Range  
T , T  
−55 to  
+150  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
2
2
1. FR−4 @ 100 mm , 1 oz copper traces.  
2. FR−4 @ 500 mm , 1 oz copper traces.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
November, 2012 − Rev. 3  
NSS20501UW3/D  
 
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