Datasheet > NSS20201DMTTBG

NSS20201DMTTBG

更新时间： 2024-11-22 11:11:15

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	213K
描述
20 V, 2 A, Low VCE(sat) NPN Transistors

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NSS20201DMTTBG 数据手册

DATA SHEET

www.onsemi.com

Low V_CE(sat)NPN Transistors

20 V, 2 A

20 Volt, 2 Amp

NPN Low V Transistors

CE(sat)

MARKING

DIAGRAM

NSS20201DMT

onsemi’s e PowerEdge family of low V

transistors are

CE(sat)

WDFN6

CASE 506AN

miniature surface mount devices featuring ultra low saturation voltage

XX MG

(V ) and high current gain capability. These are designed for use

CE(sat)

in low voltage, high speed switching applications where affordable

efficient energy control is important.

XX = Specific Device Code

= Date Code

Typical applications are DC−DC converters and LED lightning,

power management…etc. In the automotive industry they can be used

in air bag deployment and in the instrument cluster. The high current

= Pb−Free Package

(Note: Microdot may be in either location)

gain allows e PowerEdge devices to be driven directly from PMU’s

control outputs, and the Linear Gain (Beta) makes them ideal

components in analog amplifiers.

PIN CONNECTIONS

Features

• NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• NSV20201DMTWTBG − Wettable Flanks Device

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

6,7

MAXIMUM RATINGS (T = 25°C)

Rating

Collector−Emitter Voltage

Symbol

Max

Unit

Vdc

CEO

CBO

EBO

Collector−Base Voltage

Emitter−Base Voltage

3,8

Collector Current − Continuous

Collector Current − Peak

ORDERING INFORMATION

†

Device

Package

Shipping

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

NSS20201DMTTBG

WDFN6

(Pb−Free)

3000 / Tape &

Reel

NSV20201DMTWTBG

WDFN6

(Pb−Free)

3000 / Tape &

Reel

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Thermal Resistance Junction−to−Ambient

°C/W

(Notes 1 and 2)

Total Power Dissipation per Package @

T = 25°C (Note 2)

2.27

°C/W

Thermal Resistance Junction−to−Ambient

(Note 3)

Power Dissipation per Transistor @ T = 25°C

1.8

(Note 3)

Junction and Storage Temperature Range

T , T

−55 to

+150

°C

stg

1. Per JESD51−7 with 100 mm pad area and 2 oz. Cu (Dual Operation).

2. P per Transistor when both are turned on is one half of Total P or 1.13 Watts.

3. Per JESD51−7 with 100 mm pad area and 2 oz. Cu (Single−Operation).

Publication Order Number:

January, 2022 − Rev. 1

NSS20201DMT/D

12 3 4 5 6 7

中文翻译

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