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NSS20201MR6D

更新时间： 2024-09-30 21:54:07
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
4页 42K
描述
20 V, 3 A, Low VCE(sat) NPN Transistor

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NSS20201MR6D 数据手册

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NSS20201MR6T1G  
Product Preview  
20 V, 3 A, Low VCE(sat)  
NPN Transistor  
2
ON Semiconductor’s e PowerEdge family of low V  
CE(sat)  
transistors are miniature surface mount devices featuring ultra low  
saturation voltage (V ) and high current gain capability. These  
CE(sat)  
http://onsemi.com  
are designed for use in low voltage, high speed switching applications  
where affordable efficient energy control is important.  
20 VOLTS  
3.0 AMPS  
NPN LOW VCE(sat) TRANSISTOR  
EQUIVALENT RDS(on) 100 mW  
Typical application are DC−DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
COLLECTOR  
1, 2, 5, 6  
2
cluster. The high current gain allows e PowerEdge devices to be  
driven directly from PMU’s control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
3
BASE  
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Symbol  
Max  
20  
Unit  
V
4
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
V
CEO  
V
CBO  
V
EBO  
EMITTER  
40  
V
5.0  
2.0  
3.0  
V
4
5
6
Collector Current − Continuous  
Collector Current − Peak  
I
C
A
3
I
A
2
1
CM  
THERMAL CHARACTERISTICS  
Characteristic  
CASE 318G  
TSOP−6  
Symbol  
Max  
Unit  
STYLE 6  
Total Device Dissipation  
P
D
(Note 1)  
535  
mW  
T = 25°C  
Derate above 25°C  
A
4.3  
mW/°C  
°C/W  
Thermal Resistance,  
Junction−to−Ambient  
R
(Note 1)  
234  
DEVICE MARKING  
q
JA  
Total Device Dissipation  
P
(Note 2)  
(Note 2)  
1.180  
W
D
T = 25°C  
A
VS0  
Derate above 25°C  
9.4  
mW/°C  
°C/W  
Thermal Resistance,  
Junction−to−Ambient  
R
106  
q
JA  
VS0= Specific Device Code  
Thermal Resistance,  
Junction−to−Lead #1  
R
R
(Note 1)  
(Note 2)  
110  
50  
°C/W  
°C/W  
d
q
q
JL  
JL  
= Date Code  
Total Device Dissipation  
(Single Pulse < 10 s)  
P
1.75  
W
Dsingle  
(Note 2)  
ORDERING INFORMATION  
Junction and Storage  
Temperature Range  
T , T  
−55 to  
+150  
°C  
†
J
stg  
Device  
Package  
Shipping  
NSS20201MR6T1G TSOP−6 3000/Tape & Reel  
(Pb−Free)  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
2
1. FR−4 with 1 oz and 3.9 mm of copper area.  
2
2. FR−4 with 1 oz and 645 mm of copper area.  
This document contains information on a product under development. ON Semiconductor  
reserves the right to change or discontinue this product without notice.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
June, 2005 − Rev. P1  
NSS20201MR6/D  
 
1234

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