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NSS12200WT1G PDF预览

NSS12200WT1G

更新时间： 2024-11-21 10:31:43
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
6页 60K
描述
12 V, 3 A, Low VCE(sat) PNP Transistor

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中文翻译

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NSS12200WT1G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：SC-88包装说明：SMALL OUTLINE, R-PDSO-G6
针数：6Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：0.93
Is Samacsys：N最大集电极电流 (IC)：2 A
集电极-发射极最大电压：12 V配置：SINGLE
最小直流电流增益 (hFE)：100JESD-30 代码：R-PDSO-G6
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：6
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：PNP
最大功率耗散 (Abs)：0.65 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：100 MHzBase Number Matches：1

NSS12200WT1G 数据手册

 浏览型号NSS12200WT1G的Datasheet PDF文件第2页浏览型号NSS12200WT1G的Datasheet PDF文件第3页浏览型号NSS12200WT1G的Datasheet PDF文件第4页浏览型号NSS12200WT1G的Datasheet PDF文件第5页浏览型号NSS12200WT1G的Datasheet PDF文件第6页 
NSS12200WT1G  
12 V, 3 A, Low VCE(sat)  
PNP Transistor  
2
ON Semiconductor’s e PowerEdge family of low V  
CE(sat)  
transistors are miniature surface mount devices featuring ultra low  
saturation voltage (V ) and high current gain capability. These  
are designed for use in low voltage, high speed switching applications  
where affordable efficient energy control is important.  
CE(sat)  
http://onsemi.com  
12 VOLTS  
3.0 AMPS  
PNP LOW VCE(sat) TRANSISTOR  
EQUIVALENT RDS(on) 163 mW  
Typical application are DC−DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
cluster. The high current gain allows e PowerEdge devices to be  
driven directly from PMU’s control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
2
COLLECTOR  
1, 2, 5, 6  
3
BASE  
Features  
• High Current Capability (3 A)  
4
• High Power Handling (Up to 650 mW)  
EMITTER  
• Low V  
(170 mV Typical @ 1 A)  
CE(s)  
• Small Size  
• This is a Pb−Free Device  
Benefits  
1
• High Specific Current and Power Capability Reduces Required PCB Area  
• Reduced Parasitic Losses Increases Battery Life  
SC−88/SOT−363  
CASE 419B  
STYLE 20  
MAXIMUM RATINGS (T = 25°C)  
A
DEVICE MARKING  
Rating  
Symbol  
Max  
−12  
−12  
−5.0  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
6
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
V
CEO  
V
CBO  
V
EBO  
M
V2  
G
1
Collector Current − Continuous  
Collector Current − Peak  
I
−2.0  
−3.0  
C
I
CM  
V2 = Specific Device Code  
M = Date Code  
Electrostatic Discharge  
ESD  
HBM Class 3  
MM Class C  
G
= Pb−Free Package  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
ORDERING INFORMATION  
†
Device  
NSS12200WT1G  
Package  
Shipping  
SOT−363 3000/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
June, 2005 − Rev. 0  
NSS12200W/D  
123456

中文翻译

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NSS12200WT1G 替代型号

型号 品牌 替代类型 描述 数据表
NSL12AWT1G ONSEMI

类似代替

 High Current Surface Mount PNP Silicon Low VCE(sat) Transistor
NSL12AWT1 ONSEMI

类似代替

 High Current Surface Mount PNP Silicon Low VCE(sat) Transistor for Battery Operated Applic

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