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NSS12500UW3T2G_07

更新时间： 2024-11-21 02:52:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
5页 108K
描述
12 V, 8.0 A, Low VCE(sat) PNP Transistor

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NSS12500UW3T2G  
12 V, 8.0 A, Low VCE(sat)  
PNP Transistor  
2
ON Semiconductor’s e PowerEdge family of low V  
CE(sat)  
transistors are miniature surface mount devices featuring ultra low  
saturation voltage (V ) and high current gain capability. These  
CE(sat)  
http://onsemi.com  
are designed for use in low voltage, high speed switching applications  
where affordable efficient energy control is important.  
12 VOLTS  
8.0 AMPS  
PNP LOW VCE(sat) TRANSISTOR  
EQUIVALENT RDS(on) 55 mW  
Typical applications are DC−DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
COLLECTOR  
3
2
cluster. The high current gain allows e PowerEdge devices to be  
driven directly from PMU’s control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
1
• This is a Pb−Free Device  
BASE  
2
MAXIMUM RATINGS (T = 25°C)  
A
EMITTER  
Rating  
Symbol  
Max  
−12  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
A
3
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
V
CEO  
V
CBO  
V
EBO  
WDFN3  
2
CASE 506AU  
−12  
1
−7.0  
−5.0  
−8.0  
MARKING DIAGRAM  
Collector Current − Continuous  
Collector Current − Peak  
Electrostatic Discharge  
I
C
I
VE M  
CM  
G
ESD  
HBM Class 3B  
MM Class C  
1
VE = Specific Device Code  
THERMAL CHARACTERISTICS  
Characteristic  
M
= Date Code  
Symbol  
Max  
Unit  
G
= Pb−Free Package  
Total Device Dissipation, T = 25°C  
P
(Note 1)  
875  
7.0  
mW  
mW/°C  
A
D
ORDERING INFORMATION  
Derate above 25°C  
†
Device  
NSS12500UW3T2G  
Package  
Shipping  
Thermal Resistance,  
R
(Note 1)  
143  
°C/W  
q
JA  
Junction−to−Ambient  
WDFN3  
(Pb−Free)  
3000/  
Tape & Reel  
Total Device Dissipation, T = 25°C  
Derate above 25°C  
P
(Note 2)  
(Note 2)  
1.5  
11.8  
W
mW/°C  
A
D
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Thermal Resistance,  
Junction−to−Ambient  
R
85  
°C/W  
°C/W  
W
q
JA  
Thermal Resistance,  
Junction−to−Lead #3  
R
(Note 2)  
23  
q
JL  
Total Device Dissipation  
(Single Pulse < 10 sec)  
P
3.0  
Dsingle  
(Notes 2 & 3)  
Junction and Storage  
Temperature Range  
T , T  
−55 to  
+150  
°C  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
2
2
1. FR−4 @ 100 mm , 1 oz copper traces.  
2. FR−4 @ 500 mm , 1 oz copper traces.  
3. Thermal response.  
© Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
March, 2007 − Rev. 1  
NSS12500UW3/D  
 
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