5秒后页面跳转
NSS1C301ET4G PDF预览

NSS1C301ET4G

更新时间: 2024-10-02 01:16:35
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 116K
描述
100 V, 3.0 A, Low VCE(sat) NPN Transistor

NSS1C301ET4G 数据手册

 浏览型号NSS1C301ET4G的Datasheet PDF文件第2页浏览型号NSS1C301ET4G的Datasheet PDF文件第3页浏览型号NSS1C301ET4G的Datasheet PDF文件第4页浏览型号NSS1C301ET4G的Datasheet PDF文件第5页 
NSS1C301ET4G  
100 V, 3.0 A, Low VCE(sat)  
NPN Transistor  
2
ON Semiconductor’s e PowerEdge family of low V  
CE(sat)  
transistors are surface mount devices featuring ultra low saturation  
voltage (V ) and high current gain capability. These are designed  
CE(sat)  
for use in low voltage, high speed switching applications where  
affordable efficient energy control is important.  
http://onsemi.com  
Typical applications are DCDC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
100 VOLTS, 3.0 AMPS  
12.5 WATTS  
NPN LOW VCE(sat) TRANSISTOR  
COLLECTOR  
2, 4  
2
cluster. The high current gain allows e PowerEdge devices to be  
driven directly from PMU’s control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
1
BASE  
Features  
Complement to NSS1C300ET4G  
NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AECQ101  
Qualified and PPAP Capable  
3
EMITTER  
4
These Devices are PbFree and are RoHS Compliant  
2
1
3
MAXIMUM RATINGS (T = 25°C)  
A
DPAK  
CASE 369C  
STYLE 1  
Rating  
CollectorBase Voltage  
CollectorEmitter Voltage  
EmitterBase Voltage  
Collector Current Continuous  
Collector Current Peak  
Base Current  
Symbol  
Max  
140  
100  
6.0  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Adc  
V
CBO  
V
CEO  
MARKING DIAGRAM  
V
EB  
I
C
3.0  
I
6.0  
CM  
YWW  
1C31EG  
I
B
0.5  
Total Power Dissipation  
P
D
D
33  
W
@ T = 25°C  
C
0.26  
W/°C  
Derate above 25°C  
Y
= Year  
Total Power Dissipation (Note 1)  
P
WW  
1C31E  
G
= Work Week  
= Device Code  
= PbFree  
2.1  
0.017  
W
W/°C  
@ T = 25°C  
A
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +150  
°C  
J
stg  
ORDERING INFORMATION  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. These ratings are applicable when surface mounted on the minimum pad  
sizes recommended.  
Device  
Package  
Shipping  
NSS1C301ET4G  
DPAK  
2500/  
(PbFree)  
Tape & Reel  
NSV1C301ET4G  
DPAK  
2500/  
(PbFree)  
Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
January, 2014 Rev. 4  
NSS1C301E/D  
 

与NSS1C301ET4G相关器件

型号 品牌 获取价格 描述 数据表
NSS1C301ET4G_14 ONSEMI

获取价格

100 V, 3.0 A, Low VCE(sat) NPN Transistor
NSS1C301ET4G_16 ONSEMI

获取价格

NPN Transistor
NSS20101J ONSEMI

获取价格

20 V, 1.0 A, Low VCE(sat) NPN Transistor
NSS20101JT1G ONSEMI

获取价格

20 V, 1.0 A, Low VCE(sat) NPN Transistor
NSS20200DMTTBG ONSEMI

获取价格

Dual 20V 2A Low VCE(sat) PNP Transistors in WDFN6
NSS20200LT1G ONSEMI

获取价格

20 V, 4.0 A, Low VCE(sat) PNP Transistor
NSS20200LT1G_07 ONSEMI

获取价格

20 V, 4.0 A, Low VCE(sat) PNP Transistor
NSS20200W6 ONSEMI

获取价格

20 V, 3.0 A, Low VCE(sat) PNP Transistor
NSS20200W6T1G ONSEMI

获取价格

20 V, 3.0 A, Low VCE(sat) PNP Transistor
NSS20200W6T1G ROCHESTER

获取价格

2000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, MINIATURE, CASE 419B-02, SC-70-6