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NSS12601CF8T1G

更新时间： 2024-11-21 06:00:43
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 84K
描述
12 V, 8.0 A, Low VCE(sat) NPN Transistor

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NSS12601CF8T1G 数据手册

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NSS12601CF8T1G  
12 V, 8.0 A, Low VCE(sat)  
NPN Transistor  
2
ON Semiconductor's e PowerEdge family of low V  
CE(sat)  
transistors are miniature surface mount devices featuring ultra low  
saturation voltage (V ) and high current gain capability. These  
CE(sat)  
are designed for use in low voltage, high speed switching applications  
where affordable efficient energy control is important.  
http://onsemi.com  
Typical applications are DC-DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
cluster. The high current gain allows e PowerEdge devices to be  
driven directly from PMU's control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
12 VOLTS, 8.0 AMPS  
NPN LOW VCE(sat) TRANSISTOR  
EQUIVALENT RDS(on) 30 mW  
COLLECTOR  
1, 2, 3, 6, 7, 8  
2
4
BASE  
•ꢀThis is a Pb-Free Device  
MAXIMUM RATINGS (T = 25°C)  
A
5
EMITTER  
Rating  
Symbol  
Max  
12  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
A
Collector‐Emitter Voltage  
Collector‐Base Voltage  
Emitter‐Base Voltage  
V
CEO  
V
CBO  
V
EBO  
12  
ChipFET]  
8
CASE 1206A  
STYLE 4  
6.0  
6.0  
8.0  
Collector Current - Continuous  
Collector Current - Peak  
Electrostatic Discharge  
I
C
1
I
CM  
MARKING DIAGRAM  
ESD  
HBM Class 3B  
MM Class C  
VF Mꢀ  
THERMAL CHARACTERISTICS  
Characteristic  
G
Symbol  
Max  
Unit  
Total Device Dissipation, T = 25°C  
P
D
(Note 1)  
830  
6.7  
mW  
mW/°C  
A
VF = Specific Device Code  
M = Month Code  
Derate above 25°C  
G
= Pb-Free Package  
Thermal Resistance,  
Junction-to-Ambient  
R
(Note 1)  
150  
°C/W  
q
JA  
Total Device Dissipation, T = 25°C  
P
D
(Note 2)  
1.4  
11.1  
W
mW/°C  
A
PIN CONNECTIONS  
Derate above 25°C  
Thermal Resistance,  
Junction-to-Ambient  
R
R
(Note 2)  
(Note 2)  
90  
°C/W  
°C/W  
°C  
q
JA  
8
7
6
5
1
2
3
4
C
C
C
E
C
C
C
B
Thermal Resistance,  
Junction-to-Lead #1  
15  
q
JL  
Junction and Storage  
Temperature Range  
T , T  
J
-55 to  
+150  
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
2
1. FR-ā4 @ 100 mm , 1 oz copper traces.  
2
†
Device  
NSS12601CF8T1G  
Package  
Shipping  
2. FR-ā4 @ 500 mm , 1 oz copper traces.  
ChipFET  
(Pb-Free)  
3000/  
Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
©ꢀ Semiconductor Components Industries, LLC, 2007  
May, 2007 - Rev. 1  
1
Publication Order Number:  
NSS12601CF8/D  
 
123456

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