NSS20200W6
20 V, 3.0 A, Low VCE(sat)
PNP Transistor
2
ON Semiconductor’s e PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V ) and high current gain capability. These
CE(sat)
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
http://onsemi.com
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
−20 VOLTS, 3.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 65 mW
2
cluster. The high current gain allows e PowerEdge devices to be
COLLECTOR
1, 2, 5, 6
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
• This is a Pb−Free Device
3
BASE
MAXIMUM RATINGS (T = 25°C)
A
Rating
Symbol
Max
−20
Unit
Vdc
Vdc
Vdc
A
4
EMITTER
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
V
CEO
V
CBO
V
EBO
−20
−7.0
−2.0
−3.0
Collector Current − Continuous
Collector Current − Peak
I
C
SC−88/SOT−363
CASE 419B
I
A
CM
STYLE 20
1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
P
(Note 1)
426
mW
D
DEVICE MARKING
T = 25°C
A
Derate above 25°C
3.4
mW/°C
°C/W
6
Thermal Resistance,
R
(Note 1)
293
q
JA
Junction−to−Ambient
VC M
G
Total Device Dissipation
P
(Note 2)
(Note 2)
555
mW
D
T = 25°C
A
1
Derate above 25°C
4.4
mW/°C
°C/W
VC = Specific Device Code
Thermal Resistance,
Junction−to−Ambient
R
225
q
JA
M
G
= Date Code
= Pb−Free Package
Junction and Storage
Temperature Range
T , T
−55 to
+150
°C
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
†
Device
NSS20200W6T1G
Package
Shipping
2
1. FR−4 @ 100 mm , 1 oz. copper traces.
SC−88
3000/
Tape & Reel
2
2. FR−4 @ 500 mm , 1 oz. copper traces.
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
August, 2008 − Rev. 2
NSS20200W6/D