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NSS1C201L_14

更新时间： 2024-11-22 01:16:35
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 78K
描述
100 V, 3.0 A, Low VCE(sat) Transistor

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NSS1C201L_14 数据手册

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NSS1C201L, NSV1C201L  
100 V, 3.0 A, Low VCE(sat)  
NPN Transistor  
2
ON Semiconductor’s e PowerEdge family of low V  
CE(sat)  
transistors are miniature surface mount devices featuring ultra low  
saturation voltage (V ) and high current gain capability. These  
CE(sat)  
are designed for use in low voltage, high speed switching applications  
where affordable efficient energy control is important.  
www.onsemi.com  
Typical applications are DC−DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
cluster. The high current gain allows e PowerEdge devices to be  
driven directly from PMU’s control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
100 VOLTS, 3.0 AMPS  
NPN LOW VCE(sat) TRANSISTOR  
COLLECTOR  
3
2
1
Features  
BASE  
• NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
2
EMITTER  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
3
Compliant  
MAXIMUM RATINGS (T = 25°C)  
A
1
Rating  
Symbol  
Max  
100  
140  
7.0  
Unit  
Vdc  
Vdc  
Vdc  
A
2
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
V
CEO  
SOT−23 (TO−236)  
CASE 318  
V
CBO  
V
EBO  
STYLE 6  
Collector Current − Continuous  
Collector Current − Peak  
I
C
2.0  
MARKING DIAGRAM  
I
3.0  
A
CM  
THERMAL CHARACTERISTICS  
Characteristic  
VT MG  
G
Symbol  
Max  
Unit  
1
Total Device Dissipation  
P
(Note 1)  
490  
mW  
D
T = 25°C  
Derate above 25°C  
A
VT = Specific Device Code  
3.7  
mW/°C  
°C/W  
M
= Date Code*  
Thermal Resistance,  
Junction−to−Ambient  
R
(Note 1)  
255  
q
JA  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
Total Device Dissipation  
P
(Note 2)  
(Note 2)  
710  
mW  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
D
T = 25°C  
A
Derate above 25°C  
4.3  
mW/°C  
°C/W  
Thermal Resistance,  
Junction−to−Ambient  
R
176  
q
JA  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
Junction and Storage  
Temperature Range  
T , T  
−55 to  
+150  
°C  
J
stg  
NSS1C201LT1G,  
NSV1C201LT1G  
SOT−23  
(Pb−Free)  
3000 / Tape & Reel  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
2
1. FR−4 @ 100 mm , 1 oz. copper traces.  
2
2. FR−4 @ 500 mm , 1 oz. copper traces.  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
December, 2014 − Rev. 5  
NSS1C201L/D  
 
123456

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