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NSS20200LT1G_07

更新时间： 2024-01-11 06:26:44
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
5页 107K
描述
20 V, 4.0 A, Low VCE(sat) PNP Transistor

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NSS20200LT1G_07 数据手册

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NSS20200LT1G  
20 V, 4.0 A, Low VCE(sat)  
PNP Transistor  
2
ON Semiconductor’s e PowerEdge family of low V  
CE(sat)  
transistors are miniature surface mount devices featuring ultra low  
saturation voltage (V ) and high current gain capability. These  
CE(sat)  
are designed for use in low voltage, high speed switching applications  
where affordable efficient energy control is important.  
http://onsemi.com  
Typical applications are DC−DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
−20 VOLTS  
4.0 AMPS  
PNP LOW VCE(sat) TRANSISTOR  
EQUIVALENT RDS(on) 65 mW  
2
cluster. The high current gain allows e PowerEdge devices to be  
COLLECTOR  
3
driven directly from PMU’s control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
• This is a Pb−Free Device  
1
BASE  
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Symbol  
Max  
−20  
Unit  
Vdc  
Vdc  
Vdc  
A
2
EMITTER  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
V
CEO  
V
CBO  
V
EBO  
−20  
3
−7.0  
−2.0  
−4.0  
Collector Current − Continuous  
Collector Current − Peak  
Electrostatic Discharge  
I
C
1
2
I
A
CM  
SOT−23 (TO−236)  
CASE 318  
ESD  
HBM Class 3B  
MM Class C  
STYLE 6  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
DEVICE MARKING  
Total Device Dissipation  
P
(Note 1)  
460  
mW  
D
T = 25°C  
A
Derate above 25°C  
3.7  
mW/°C  
°C/W  
VC M G  
G
Thermal Resistance,  
R
(Note 1)  
270  
q
JA  
1
Junction−to−Ambient  
Total Device Dissipation  
P
(Note 2)  
(Note 2)  
540  
mW  
D
T = 25°C  
VC = Specific Device Code  
A
Derate above 25°C  
4.3  
mW/°C  
°C/W  
M
= Date Code*  
G
= Pb−Free Package  
Thermal Resistance,  
R
230  
q
JA  
(Note: Microdot may be in either location)  
Junction−to−Ambient  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
Total Device Dissipation  
(Single Pulse < 10 sec.)  
P
710  
mW  
Dsingle  
(Note 3)  
Junction and Storage  
Temperature Range  
T , T  
−55 to  
+150  
°C  
J
stg  
ORDERING INFORMATION  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
†
Device  
Package  
Shipping  
NSS20200LT1G  
SOT−23  
(Pb−Free)  
3000/Tape & Reel  
2
1. FR−4 @ 100 mm , 1 oz. copper traces.  
2
2. FR−4 @ 500 mm , 1 oz. copper traces.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
3. Thermal response.  
© Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
March, 2007 − Rev. 2  
NSS20200L/D  
 
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