Datasheet > NSS1C300ET4G_15

NSS1C300ET4G_15

更新时间： 2024-01-31 23:31:02

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	82K
描述
100 V, 3.0 A, Low VCE(sat) PNP Transistor

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NSS1C300ET4G_15 数据手册

NSS1C300ET4G

100 V, 3.0 A, Low V_CE(sat)

PNP Transistor

ON Semiconductor’s e PowerEdge family of low V

CE(sat)

transistors are surface mount devices featuring ultra low saturation

voltage (V ) and high current gain capability. These are designed

for use in low voltage, high speed switching applications where

affordable efficient energy control is important.

CE(sat)

www.onsemi.com

Typical applications are DC−DC converters and power management

in portable and battery powered products such as cellular and cordless

phones, PDAs, computers, printers, digital cameras and MP3 players.

Other applications are low voltage motor controls in mass storage

products such as disc drives and tape drives. In the automotive

industry they can be used in air bag deployment and in the instrument

cluster. The high current gain allows e PowerEdge devices to be

driven directly from PMU’s control outputs, and the Linear Gain

(Beta) makes them ideal components in analog amplifiers.

100 VOLTS, 3.0 AMPS

PNP LOW V_CE(sat)TRANSISTOR

COLLECTOR

2, 4

BASE

Features

EMITTER

• Complement to NSS1C301ET4G

• NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

DPAK

CASE 369C

STYLE 1

MAXIMUM RATINGS (T = 25°C)

Rating

Symbol

Max

Unit

Collector−Base Voltage

140

Vdc

CBO

MARKING DIAGRAM

Collector−Emitter Voltage

Emitter−Base Voltage

Collector Current − Continuous

Collector Current − Peak

Base Current

100

6.0

3.0

6.0

0.5

Vdc

Adc

CEO

YWW

1C30EG

= Year

Total Power Dissipation

1C30E

= Work Week

= Device Code

= Pb−Free

0.26

W/°C

@ T = 25°C

Derate above 25°C

Total Power Dissipation (Note 1)

2.1

0.017

W/°C

@ T = 25°C

Derate above 25°C

ORDERING INFORMATION

Operating and Storage Junction

Temperature Range

T , T

−65 to +150

°C

stg

†

Device

Package

Shipping

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. These ratings are applicable when surface mounted on the minimum pad

sizes recommended.

NSS1C300ET4G

DPAK

(Pb−Free)

2500/

Tape & Reel

NSV1C300ET4G

DPAK

(Pb−Free)

2500/

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

June, 2015 − Rev. 7

NSS1C300E/D

12 3 4 5 6

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