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NSS1C200MZ4T1G

更新时间： 2024-11-21 12:49:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
5页 110K
描述
100 V, 2.0 A, Low VCE(sat) PNP Transistor

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NSS1C200MZ4T1G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G4针数：4
Reach Compliance Code：not_compliantECCN代码：EAR99
Factory Lead Time：10 weeks风险等级：1.5
外壳连接：COLLECTOR最大集电极电流 (IC)：2 A
集电极-发射极最大电压：100 V配置：SINGLE
最小直流电流增益 (hFE)：50JEDEC-95代码：TO-261AA
JESD-30 代码：R-PDSO-G4JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：4封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：PNP表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：120 MHz
Base Number Matches：1

NSS1C200MZ4T1G 数据手册

 浏览型号NSS1C200MZ4T1G的Datasheet PDF文件第2页浏览型号NSS1C200MZ4T1G的Datasheet PDF文件第3页浏览型号NSS1C200MZ4T1G的Datasheet PDF文件第4页浏览型号NSS1C200MZ4T1G的Datasheet PDF文件第5页 
NSS1C200MZ4,  
NSV1C200MZ4  
100 V, 2.0 A, Low VCE(sat)  
PNP Transistor  
2
ON Semiconductor’s e PowerEdge family of low V  
CE(sat)  
transistors are miniature surface mount devices featuring ultra low  
saturation voltage (V ) and high current gain capability. These  
are designed for use in low voltage, high speed switching applications  
where affordable efficient energy control is important.  
CE(sat)  
http://onsemi.com  
−100 VOLTS, 2.0 AMPS  
PNP LOW VCE(sat) TRANSISTOR  
Typical applications are DC−DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
COLLECTOR  
2,4  
2
cluster. The high current gain allows e PowerEdge devices to be  
1
driven directly from PMU’s control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
BASE  
3
Features  
EMITTER  
• NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
MARKING  
DIAGRAM  
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant  
MAXIMUM RATINGS (T = 25°C)  
A
SOT−223  
CASE 318E  
STYLE 1  
AYW  
1C200G  
Rating  
Symbol  
Max  
Unit  
Collector-Emitter Voltage  
Collector-Base Voltage  
V
CEO  
−100  
−140  
−7.0  
1.0  
Vdc  
Vdc  
Vdc  
A
1
V
CBO  
V
EBO  
A
Y
W
= Assembly Location  
= Year  
= Work Week  
Emitter-Base Voltage  
Base Current − Continuous  
Collector Current − Continuous  
Collector Current − Peak  
I
B
1C200 = Specific Device Code  
I
C
2.0  
A
G
= Pb−Free Package  
I
3.0  
A
CM  
THERMAL CHARACTERISTICS  
PIN ASSIGNMENT  
Characteristic  
Symbol  
Max  
Unit  
4
Total Device Dissipation  
P
D
(Note 1)  
C
T
= 25°C  
800  
6.5  
mW  
mW/°C  
A
Derate above 25°C  
Thermal Resistance,  
Junction−to−Ambient  
R
(Note 1)  
155  
°C/W  
q
JA  
B
C
E
3
1
2
Total Device Dissipation  
P (Note 2)  
D
T
= 25°C  
2.0  
15.6  
W
mW/°C  
Top View Pinout  
A
Derate above 25°C  
ORDERING INFORMATION  
Thermal Resistance,  
R
(Note 2)  
64  
°C/W  
q
JA  
Junction−to−Ambient  
†
Device  
Package  
Shipping  
Junction and Storage  
Temperature Range  
T , T  
−55 to  
+150  
°C  
J
stg  
NSS1C200MZ4T1G  
NSV1C200MZ4T1G  
SOT−223  
(Pb−Free)  
1000/  
Tape & Reel  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
NSS1C200MZ4T3G  
SOT−223  
(Pb−Free)  
4000/  
Tape & Reel  
2
2
1. FR−4 @ 7.6 mm , 1 oz. copper traces.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
2. FR−4 @ 645 mm , 1 oz. copper traces.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
March, 2013− Rev. 5  
NSS1C200MZ4/D  
 
12345

中文翻译

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NSS1C200MZ4T1G 替代型号

型号 品牌 替代类型 描述 数据表
NSS1C200MZ4T3G ONSEMI

类似代替

 100 V, 2.0 A, Low VCE(sat) PNP Transistor
NSV1C200MZ4T1G ONSEMI

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