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NSS1C200T1G

更新时间： 2024-11-21 06:00:43
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
5页 95K
描述
100 V, 2.0 A, Low VCE(sat) PNP Transistor

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NSS1C200T1G 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：TO-261AA包装说明：SMALL OUTLINE, R-PDSO-G4
针数：4Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.75
Is Samacsys：N外壳连接：COLLECTOR
最大集电极电流 (IC)：2 A集电极-发射极最大电压：100 V
配置：SINGLE最小直流电流增益 (hFE)：50
JEDEC-95代码：TO-261AAJESD-30 代码：R-PDSO-G4
元件数量：1端子数量：4
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
最大功率耗散 (Abs)：2 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：120 MHz
Base Number Matches：1

NSS1C200T1G 数据手册

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NSS1C200MZ4  
100 V, 2.0 A, Low VCE(sat)  
PNP Transistor  
2
ON Semiconductor’s e PowerEdge family of low V  
CE(sat)  
transistors are miniature surface mount devices featuring ultra low  
saturation voltage (V ) and high current gain capability. These  
CE(sat)  
are designed for use in low voltage, high speed switching applications  
where affordable efficient energy control is important.  
http://onsemi.com  
Typical applications are DC−DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
cluster. The high current gain allows e PowerEdge devices to be  
driven directly from PMU’s control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
−100 VOLTS, 2.0 AMPS  
PNP LOW VCE(sat) TRANSISTOR  
COLLECTOR  
2,4  
2
1
BASE  
3
Features  
EMITTER  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
MARKING  
DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
Max  
−100  
−140  
−7.0  
1.0  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
SOT−223  
CASE 318E  
STYLE 1  
AYW  
1C200G  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current − Continuous  
V
CEO  
V
CB  
1
V
I
EB  
A
Y
W
= Assembly Location  
= Year  
= Work Week  
I
B
C
Collector Current − Continuous  
Collector Current − Peak  
2.0  
3.0  
1C200 = Specific Device Code  
G
= Pb−Free Package  
Total Power Dissipation  
P
D
W
Total P @ T = 25°C (Note 1)  
2.0  
0.8  
D
A
PIN ASSIGNMENT  
Total P @ T = 25°C (Note 2)  
D
A
4
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to  
+150  
°C  
J
stg  
C
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
B
C
E
3
1
2
Thermal Resistance,  
R
°C/W  
q
JA  
Junction−to−Ambient (Note 1)  
Junction−to−Ambient (Note 2)  
64  
155  
Top View Pinout  
ORDERING INFORMATION  
Maximum Lead Temperature for  
Soldering Purposes, 1/8″ from  
case for 5 seconds  
T
L
260  
°C  
†
Device  
Package  
Shipping  
NSS1C200T1G  
SOT−223  
(Pb−Free)  
1000/  
Tape & Reel  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
NSS1C200T3G  
SOT−223  
(Pb−Free)  
4000/  
Tape & Reel  
1. mounted on 1″ sq. (645 sq. mm) Collector pad on FR−4 bd material  
2. mounted on 0.012″ sq. (7.6 sq. mm) Collector pad on FR−4 bd material  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
September, 2010 − Rev. 2  
NSS1C200MZ4/D  
 
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