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NSS12501UW3T2G

更新时间： 2024-11-21 07:03:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
5页 83K
描述
12 V, 7.0 A, Low VCE(sat) NPN Transistor

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NSS12501UW3T2G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：DFN包装说明：SMALL OUTLINE, S-PDSO-N3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：1.19
外壳连接：COLLECTOR最大集电极电流 (IC)：5 A
集电极-发射极最大电压：12 V配置：SINGLE
最小直流电流增益 (hFE)：200JESD-30 代码：S-PDSO-N3
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：SQUARE封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
最大功率耗散 (Abs)：1.5 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin (Sn)端子形式：NO LEAD
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：150 MHz最大关闭时间（toff）：420 ns
最大开启时间（吨）：190 nsBase Number Matches：1

NSS12501UW3T2G 数据手册

 浏览型号NSS12501UW3T2G的Datasheet PDF文件第2页浏览型号NSS12501UW3T2G的Datasheet PDF文件第3页浏览型号NSS12501UW3T2G的Datasheet PDF文件第4页浏览型号NSS12501UW3T2G的Datasheet PDF文件第5页 
NSS12501UW3T2G  
12 V, 7.0 A, Low VCE(sat)  
NPN Transistor  
2
ON Semiconductor's e PowerEdge family of low V  
CE(sat)  
transistors are miniature surface mount devices featuring ultra low  
saturation voltage (V ) and high current gain capability. These  
CE(sat)  
are designed for use in low voltage, high speed switching applications  
where affordable efficient energy control is important.  
http://onsemi.com  
Typical applications are DC-DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
cluster. The high current gain allows e PowerEdge devices to be  
driven directly from PMU's control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
12 VOLTS, 7.0 AMPS  
NPN LOW VCE(sat) TRANSISTOR  
EQUIVALENT RDS(on) 31 mW  
2
COLLECTOR  
3
Features  
1
BASE  
•ꢀThis is a Pb-Free Device  
MAXIMUM RATINGS (T = 25°C)  
A
2
EMITTER  
Rating  
Symbol  
Max  
12  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
A
Collector‐Emitter Voltage  
Collector‐Base Voltage  
Emitter‐Base Voltage  
V
CEO  
V
CBO  
V
EBO  
3
12  
WDFN3  
CASE 506AU  
6.0  
5.0  
7.0  
2
1
Collector Current - Continuous  
Collector Current - Peak  
Electrostatic Discharge  
I
C
I
CM  
MARKING DIAGRAM  
ESD  
HBM Class 3B  
MM Class C  
VF MG  
THERMAL CHARACTERISTICS  
Characteristic  
G
Symbol  
Max  
Unit  
1
Total Device Dissipation, T = 25°C  
P
(Note 1)  
875  
7.0  
mW  
mW/°C  
VF = Specific Device Code  
M
A
D
Derate above 25°C  
= Date Code  
= Pb-Free Package  
G
(Note: Microdot may be in either location)  
Thermal Resistance,  
Junction-to-Ambient  
R
(Note 1)  
143  
°C/W  
q
JA  
Total Device Dissipation, T = 25°C  
P
D
(Note 2)  
1.5  
11.8  
W
mW/°C  
A
Derate above 25°C  
ORDERING INFORMATION  
Thermal Resistance,  
Junction-to-Ambient  
R
R
(Note 2)  
(Note 2)  
85  
°C/W  
°C/W  
°C  
q
JA  
†
Device  
Package  
Shipping  
Thermal Resistance,  
Junction-to-Lead #1  
23  
q
JL  
WDFN3  
(Pb-Free)  
3000/  
Tape & Reel  
NSS12501UW3T2G  
Junction and Storage  
Temperature Range  
T , T  
J
-55 to  
+150  
stg  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
2
1. FR-ā4 @ 100 mm , 1 oz copper traces.  
2
2. FR-ā4 @ 500 mm , 1 oz copper traces.  
©ꢀ Semiconductor Components Industries, LLC, 2007  
May, 2007 - Rev. 2  
1
Publication Order Number:  
NSS12501UW3/D  
 
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