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NSS12200WT1G_09 PDF预览

NSS12200WT1G_09

更新时间: 2024-11-21 12:20:23
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
5页 134K
描述
12 V, 3 A, Low VCE(sat) PNP Transistor

NSS12200WT1G_09 数据手册

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NSS12200WT1G  
12 V, 3 A, Low VCE(sat)  
PNP Transistor  
2
ON Semiconductor’s e PowerEdge family of low V  
CE(sat)  
transistors are miniature surface mount devices featuring ultra low  
saturation voltage (V ) and high current gain capability. These  
are designed for use in low voltage, high speed switching applications  
where affordable efficient energy control is important.  
CE(sat)  
http://onsemi.com  
12 VOLTS  
3.0 AMPS  
PNP LOW VCE(sat) TRANSISTOR  
EQUIVALENT RDS(on) 163 mW  
Typical application are DCDC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
cluster. The high current gain allows e PowerEdge devices to be  
driven directly from PMU’s control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
2
COLLECTOR  
1, 2, 5, 6  
3
BASE  
Features  
High Current Capability (3 A)  
High Power Handling (Up to 650 mW)  
4
EMITTER  
Low V  
(170 mV Typical @ 1 A)  
CE(s)  
Small Size  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
1
Benefits  
SC88/SOT363  
CASE 419B  
STYLE 20  
High Specific Current and Power Capability Reduces Required PCB Area  
Reduced Parasitic Losses Increases Battery Life  
DEVICE MARKING  
MAXIMUM RATINGS (T = 25°C)  
A
6
Rating  
Symbol  
Max  
12  
12  
5.0  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
V
CEO  
M
V2  
G
V
CBO  
V
EBO  
1
Collector Current Continuous  
Collector Current Peak  
I
C
2.0  
3.0  
V2 = Specific Device Code  
M = Date Code  
I
CM  
Electrostatic Discharge  
ESD  
HBM Class 3  
MM Class C  
G
= PbFree Package  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
Device  
NSS12200WT1G  
Package  
Shipping  
SOT363  
(PbFree)  
3000 /  
Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
October, 2009 Rev. 1  
NSS12200W/D  

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