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NGB8202AN PDF预览

NGB8202AN

更新时间: 2022-02-26 12:53:12
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
8页 124K
描述
Ignition IGBT 20 A, 400 V, N.Channel D2PAK

NGB8202AN 数据手册

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NGB8202N, NGB8202AN  
Ignition IGBT  
20 A, 400 V, NChannel D2PAK  
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features  
monolithic circuitry integrating ESD and Overvoltage clamped  
protection for use in inductive coil drivers applications. Primary uses  
include Ignition, Direct Fuel Injection, or wherever high voltage and  
high current switching is required.  
http://onsemi.com  
20 AMPS, 400 VOLTS  
CE(on) = 1.3 V @  
IC = 10 A, VGE . 4.5 V  
Features  
V
Ideal for CoilonPlug and DriveronCoil Applications  
GateEmitter ESD Protection  
C
Temperature Compensated GateCollector Voltage Clamp Limits  
Stress Applied to Load  
Integrated ESD Diode Protection  
R
G
G
Low Threshold Voltage for Interfacing Power Loads to Logic or  
Microprocessor Devices  
R
GE  
Low Saturation Voltage  
High Pulsed Current Capability  
E
These are PbFree Devices  
Applications  
Ignition Systems  
2
D PAK  
CASE 418B  
STYLE 4  
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
MARKING DIAGRAM  
Rating  
CollectorEmitter Voltage  
CollectorGate Voltage  
GateEmitter Voltage  
Symbol  
Value  
440  
Unit  
V
4
V
CES  
Collector  
V
CER  
440  
V
GB  
V
GE  
"15  
V
8202xxG  
AYWW  
Collector CurrentContinuous  
I
C
20  
50  
A
DC  
A
AC  
@ T = 25°C Pulsed  
C
Continuous Gate Current  
I
I
1.0  
20  
mA  
mA  
kV  
1
Gate  
3
G
Emitter  
2
Transient Gate Current (t2 ms, f100 Hz)  
ESD (ChargedDevice Model)  
G
Collector  
ESD  
ESD  
2.0  
GB8202xx = Device Code  
xx = N or AN  
ESD (Human Body Model)  
R = 1500 W, C = 100 pF  
kV  
8.0  
A
= Assembly Location  
Y
WW  
G
= Year  
= Work Week  
= PbFree Package  
ESD (Machine Model) R = 0 W, C = 200 pF  
ESD  
500  
V
Total Power Dissipation @ T = 25°C  
P
D
150  
1.0  
W
W/°C  
C
Derate above 25°C  
ORDERING INFORMATION  
Operating & Storage Temperature Range  
T , T  
55 to +175  
°C  
J
stg  
Device  
Package  
Shipping  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
2
NGB8202NT4G  
D PAK  
800/Tape & Reel  
(PbFree)  
2
NGB8202ANT4G  
D PAK  
800/Tape & Reel  
(PbFree)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
February, 2012 Rev. 7  
NGB8202N/D  

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