Datasheet > NGB8206ANTF4G

NGB8206ANTF4G

更新时间： 2022-02-26 11:34:50

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
8页	130K
描述
Ignition IGBT 20 A, 350 V, N.Channel D2PAK

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NGB8206ANTF4G 数据手册

NGB8206N, NGB8206AN

Ignition IGBT

20 A, 350 V, N−Channel D²PAK

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

monolithic circuitry integrating ESD and Overvoltage clamped

protection for use in inductive coil drivers applications. Primary uses

include Ignition, Direct Fuel Injection, or wherever high voltage and

high current switching is required.

http://onsemi.com

20 AMPS, 350 VOLTS

Features

V_CE(on)= 1.3 V @

• Ideal for Coil−on−Plug and Driver−on−Coil Applications

• Gate−Emitter ESD Protection

I_C= 10 A, V_GE. 4.5 V

• Temperature Compensated Gate−Collector Voltage Clamp Limits

Stress Applied to Load

• Integrated ESD Diode Protection

• Low Threshold Voltage for Interfacing Power Loads to Logic or

Microprocessor Devices

• Low Saturation Voltage

• High Pulsed Current Capability

• These are Pb−Free Devices

Applications

MARKING DIAGRAM

• Ignition Systems

4 Collector

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector−Emitter Voltage

Collector−Gate Voltage

Gate−Emitter Voltage

Symbol

Value

390

Unit

8206xxG

AYWW

CES

CER

390

D PAK

CASE 418B

STYLE 4

$15

Gate

Emitter

Collector Current−Continuous

@ T = 25°C − Pulsed

Collector

Continuous Gate Current

1.0

GB8206xx = Device Code

xx = N or AN

Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz)

ESD (Charged−Device Model)

= Assembly Location

ESD

2.0

= Year

= Work Week

= Pb−Free Package

ESD (Human Body Model)

R = 1500 W, C = 100 pF

8.0

ESD (Machine Model) R = 0 W, C = 200 pF

ESD

500

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 7 of this data sheet.

Total Power Dissipation @ T = 25°C

150

1.0

W/°C

Derate above 25°C

Operating & Storage Temperature Range

T , T

−55 to

+175

°C

stg

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

Publication Order Number:

February, 2012 − Rev. 9

NGB8206N/D

12 3 4 5 6 7 8

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