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NGB8207ABNT4G

更新时间： 2024-11-21 12:22:47
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
7页 125K
描述
Ignition IGBT 20 A, 365 V, N.Channel D2PAK

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NGB8207ABNT4G 数据手册

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NGB8207AN, NGB8207ABN  
Ignition IGBT  
20 A, 365 V, N−Channel D2PAK  
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features  
monolithic circuitry integrating ESD and Overvoltage clamped  
protection for use in inductive coil drivers applications. Primary uses  
include Ignition, Direct Fuel Injection, or wherever high voltage and  
high current switching is required.  
http://onsemi.com  
20 AMPS, 365 VOLTS  
Features  
VCE(on) = 1.75 V  
• Ideal for Coil−on−Plug and Driver−on−Coil Applications  
Typ @ IC = 10 A, VGE . 4.5 V  
• Gate−Emitter ESD Protection  
• Temperature Compensated Gate−Collector Voltage Clamp Limits  
Stress Applied to Load  
C
• Integrated ESD Diode Protection  
• Low Threshold Voltage for Interfacing Power Loads to Logic or  
R
G
G
Microprocessor Devices  
• Low Saturation Voltage  
R
GE  
• High Pulsed Current Capability  
• Minimum Avalanche Energy − 500 mJ  
E
• Gate Resistor (R ) = 70 W  
G
• This is a Pb−Free Device  
2
D PAK  
CASE 418B  
STYLE 4  
Applications  
• Ignition Systems  
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
MARKING DIAGRAM  
Rating  
Collector−Emitter Voltage  
Gate−Emitter Voltage  
Symbol  
Value  
365  
Unit  
V
4
Collector  
V
CES  
V
GE  
$15  
V
NGB  
8207AxG  
AYWW  
Collector Current−Continuous  
I
20  
50  
A
A
C
DC  
AC  
@ T = 25°C − Pulsed  
C
Continuous Gate Current  
I
I
1.0  
20  
mA  
mA  
kV  
G
1
Gate  
3
Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz)  
ESD (Charged−Device Model)  
G
Emitter  
2
ESD  
ESD  
2.0  
Collector  
ESD (Human Body Model)  
R = 1500 W, C = 100 pF  
kV  
NGB8207Ax = Device Code  
x = N or B  
8.0  
A
Y
WW  
G
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
ESD (Machine Model) R = 0 W, C = 200 pF  
ESD  
500  
V
Total Power Dissipation @ T = 25°C  
P
D
165  
1.1  
W
W/°C  
C
Derate above 25°C (Note 1)  
Operating & Storage Temperature Range  
T , T  
−55 to  
+175  
°C  
J
stg  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
2
NGB8207ANT4G  
D PAK  
800 / Tape & Reel  
800 / Tape & Reel  
(Pb−Free)  
2
NGB8207ABNT4G  
D PAK  
1. Assuming infinite heatsink Case−to−Ambient  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
December, 2011 − Rev. 1  
NGB8207AN/D  
 
1234567

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NGB8207ABNT4G 替代型号

型号 品牌 替代类型 描述 数据表
NGB8207ANT4G ONSEMI

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 Ignition IGBT 20 A, 365 V, N−Channel D2PAK

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