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NGB8245N PDF预览

NGB8245N

更新时间: 2024-11-21 12:22:47
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
7页 122K
描述
Ignition IGBT 20 A, 450 V, N.Channel D2PAK

NGB8245N 数据手册

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NGB8245N  
Ignition IGBT  
20 A, 450 V, NChannel D2PAK  
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features  
monolithic circuitry integrating ESD and Overvoltage clamped  
protection for use in inductive coil drivers applications. Primary uses  
include Ignition, Direct Fuel Injection, or wherever high voltage and  
high current switching is required.  
http://onsemi.com  
20 A, 450 V  
CE(on) 3 1.24 V @  
IC = 15 A, VGE . 4.0 V  
Features  
V
Ideal for CoilonPlug and DriveronCoil Applications  
2
D PAK Package Offers Smaller Footprint for Increased Board Space  
C
GateEmitter ESD Protection  
Temperature Compensated GateCollector Voltage Clamp Limits  
Stress Applied to Load  
Low Threshold Voltage for Interfacing Power Loads to Logic or  
Microprocessor Devices  
R
G
G
Low Saturation Voltage  
R
GE  
High Pulsed Current Capability  
This is a PbFree Device  
E
Applications  
Ignition Systems  
MARKING DIAGRAM  
4 Collector  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
CollectorEmitter Voltage  
CollectorGate Voltage  
GateEmitter Voltage  
Symbol  
Value  
500  
Unit  
V
NGB  
8245NG  
AYWW  
1
V
CES  
V
CER  
2
500  
V
D PAK  
CASE 418B  
STYLE 4  
V
GE  
"15  
V
1
Gate  
3
Emitter  
2
Collector CurrentContinuous  
I
C
20  
50  
A
DC  
A
AC  
Collector  
@ T = 25°C Pulsed  
C
Continuous Gate Current  
I
I
1.0  
mA  
NGB8245N= Device Code  
G
A
= Assembly Location  
Transient Gate Current  
(t 2 ms, f 100 Hz)  
G
Y
= Year  
20  
mA  
kV  
WW  
G
= Work Week  
= PbFree Package  
ESD (ChargedDevice Model)  
ESD  
ESD  
2.0  
ESD (Human Body Model)  
R = 1500 W, C = 100 pF  
8.0  
kV  
V
ORDERING INFORMATION  
ESD (Machine Model) R = 0 W, C = 200 pF  
ESD  
500  
Device  
Package  
Shipping  
Total Power Dissipation @ T = 25°C  
P
D
150  
1.0  
W
W/°C  
C
2
Derate above 25°C  
NGB8245NT4G  
D PAK  
800 / Tape & Reel  
(PbFree)  
Operating & Storage Temperature Range  
T , T  
55 to +175  
°C  
J
stg  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
September, 2012 Rev. 2  
NGB8245N/D  

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