NGB8245N
Ignition IGBT
20 A, 450 V, N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
http://onsemi.com
20 A, 450 V
CE(on) 3 1.24 V @
IC = 15 A, VGE . 4.0 V
Features
V
• Ideal for Coil−on−Plug and Driver−on−Coil Applications
2
• D PAK Package Offers Smaller Footprint for Increased Board Space
C
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
R
G
G
• Low Saturation Voltage
R
GE
• High Pulsed Current Capability
• This is a Pb−Free Device
E
Applications
• Ignition Systems
MARKING DIAGRAM
4 Collector
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Symbol
Value
500
Unit
V
NGB
8245NG
AYWW
1
V
CES
V
CER
2
500
V
D PAK
CASE 418B
STYLE 4
V
GE
"15
V
1
Gate
3
Emitter
2
Collector Current−Continuous
I
C
20
50
A
DC
A
AC
Collector
@ T = 25°C − Pulsed
C
Continuous Gate Current
I
I
1.0
mA
NGB8245N= Device Code
G
A
= Assembly Location
Transient Gate Current
(t ≤ 2 ms, f ≤ 100 Hz)
G
Y
= Year
20
mA
kV
WW
G
= Work Week
= Pb−Free Package
ESD (Charged−Device Model)
ESD
ESD
2.0
ESD (Human Body Model)
R = 1500 W, C = 100 pF
8.0
kV
V
ORDERING INFORMATION
ESD (Machine Model) R = 0 W, C = 200 pF
ESD
500
†
Device
Package
Shipping
Total Power Dissipation @ T = 25°C
P
D
150
1.0
W
W/°C
C
2
Derate above 25°C
NGB8245NT4G
D PAK
800 / Tape & Reel
(Pb−Free)
Operating & Storage Temperature Range
T , T
−55 to +175
°C
J
stg
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
September, 2012 − Rev. 2
NGB8245N/D