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NGB8206NT4 PDF预览

NGB8206NT4

更新时间： 2024-02-14 14:42:27
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
7页 118K
描述
Ignition IGBT 20 A, 350 V, N−Channel D2PAK

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NGB8206NT4 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SFM
包装说明：LEAD FREE, CASE 418B-04, D2PAK-3针数：4
Reach Compliance Code：unknown风险等级：5.6
Is Samacsys：N其他特性：VOLTAGE CLAMPING
外壳连接：COLLECTOR最大集电极电流 (IC)：20 A
集电极-发射极最大电压：390 V配置：SINGLE WITH BUILT-IN DIODE AND RESISTOR
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：NOT SPECIFIED元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
认证状态：COMMERCIAL表面贴装：YES
端子面层：MATTE TIN端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：40
晶体管应用：AUTOMOTIVE IGNITION晶体管元件材料：SILICON
标称断开时间 (toff)：18500 ns标称接通时间 (ton)：6500 ns
Base Number Matches：1

NGB8206NT4 数据手册

 浏览型号NGB8206NT4的Datasheet PDF文件第2页浏览型号NGB8206NT4的Datasheet PDF文件第3页浏览型号NGB8206NT4的Datasheet PDF文件第4页浏览型号NGB8206NT4的Datasheet PDF文件第5页浏览型号NGB8206NT4的Datasheet PDF文件第6页浏览型号NGB8206NT4的Datasheet PDF文件第7页 
NGB8206N  
Ignition IGBT  
20 A, 350 V, N−Channel D2PAK  
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features  
monolithic circuitry integrating ESD and Overvoltage clamped  
protection for use in inductive coil drivers applications. Primary uses  
include Ignition, Direct Fuel Injection, or wherever high voltage and  
high current switching is required.  
http://onsemi.com  
20 AMPS, 350 VOLTS  
VCE(on) = 1.3 V @  
IC = 10 A, VGE . 4.5 V  
Features  
• Ideal for Coil−on−Plug and Driver−on−Coil Applications  
• Gate−Emitter ESD Protection  
• Temperature Compensated Gate−Collector Voltage Clamp Limits  
Stress Applied to Load  
C
• Integrated ESD Diode Protection  
• Low Threshold Voltage for Interfacing Power Loads to Logic or  
Microprocessor Devices  
R
G
G
• Low Saturation Voltage  
R
GE  
• High Pulsed Current Capability  
• Optional Gate Resistor (R ) and Gate−Emitter Resistor (R  
• Pb−Free Packages are Available  
)
G
GE  
E
MARKING DIAGRAM  
Applications  
4 Collector  
• Ignition Systems  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
GB  
8206NG  
AYWW  
J
1
Rating  
Collector−Emitter Voltage  
Collector−Gate Voltage  
Gate−Emitter Voltage  
Symbol  
Value  
390  
Unit  
V
2
D PAK  
V
CES  
CER  
CASE 418B  
STYLE 4  
1
Gate  
3
V
390  
V
Emitter  
2
V
$15  
V
GE  
Collector  
Collector Current−Continuous  
I
20  
50  
A
A
C
DC  
AC  
GB8206N = Device Code  
@ T = 25°C − Pulsed  
C
A
= Assembly Location  
Continuous Gate Current  
I
I
1.0  
20  
mA  
mA  
kV  
G
G
Y
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz)  
ESD (Charged−Device Model)  
ESD  
ESD  
2.0  
ESD (Human Body Model)  
R = 1500 W, C = 100 pF  
kV  
ORDERING INFORMATION  
8.0  
†
50 Units / Rail  
50 Units / Rail  
Device  
Package  
Shipping  
ESD (Machine Model) R = 0 W, C = 200 pF  
ESD  
500  
V
2
NGB8206N  
D PAK  
Total Power Dissipation @ T = 25°C  
P
150  
1.0  
W
W/°C  
C
D
Derate above 25°C  
2
NGB8206NG  
D PAK  
(Pb−Free)  
Operating & Storage Temperature Range  
T , T  
−55 to  
+175  
°C  
J
stg  
2
NGB8206NT4  
D PAK  
800 / Tape & Reel  
800 / Tape & Reel  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
2
NGB8206NT4G  
D PAK  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
August, 2006 − Rev. 6  
NGB8206N/D  
1234567

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