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NGB8206AN

更新时间： 2024-11-21 11:58:47
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
8页 130K
描述
Ignition IGBT 20 A, 350 V, N.Channel D2PAK

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中文翻译

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NGB8206AN 数据手册

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NGB8206N, NGB8206AN  
Ignition IGBT  
20 A, 350 V, N−Channel D2PAK  
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features  
monolithic circuitry integrating ESD and Overvoltage clamped  
protection for use in inductive coil drivers applications. Primary uses  
include Ignition, Direct Fuel Injection, or wherever high voltage and  
high current switching is required.  
http://onsemi.com  
20 AMPS, 350 VOLTS  
Features  
VCE(on) = 1.3 V @  
• Ideal for Coil−on−Plug and Driver−on−Coil Applications  
• Gate−Emitter ESD Protection  
IC = 10 A, VGE . 4.5 V  
• Temperature Compensated Gate−Collector Voltage Clamp Limits  
C
Stress Applied to Load  
• Integrated ESD Diode Protection  
• Low Threshold Voltage for Interfacing Power Loads to Logic or  
R
G
G
Microprocessor Devices  
• Low Saturation Voltage  
R
GE  
• High Pulsed Current Capability  
• These are Pb−Free Devices  
E
Applications  
MARKING DIAGRAM  
• Ignition Systems  
4 Collector  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Collector−Emitter Voltage  
Collector−Gate Voltage  
Gate−Emitter Voltage  
Symbol  
Value  
390  
Unit  
V
GB  
8206xxG  
AYWW  
V
CES  
1
2
V
CER  
390  
V
D PAK  
CASE 418B  
STYLE 4  
V
GE  
$15  
20  
50  
V
1
Gate  
3
Emitter  
2
Collector Current−Continuous  
I
C
A
DC  
A
AC  
@ T = 25°C − Pulsed  
Collector  
C
Continuous Gate Current  
I
I
1.0  
20  
mA  
mA  
kV  
G
GB8206xx = Device Code  
xx = N or AN  
Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz)  
ESD (Charged−Device Model)  
G
A
= Assembly Location  
ESD  
ESD  
2.0  
Y
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
ESD (Human Body Model)  
R = 1500 W, C = 100 pF  
kV  
8.0  
ESD (Machine Model) R = 0 W, C = 200 pF  
ESD  
500  
V
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 7 of this data sheet.  
Total Power Dissipation @ T = 25°C  
P
D
150  
1.0  
W
W/°C  
C
Derate above 25°C  
Operating & Storage Temperature Range  
T , T  
−55 to  
+175  
°C  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
February, 2012 − Rev. 9  
NGB8206N/D  
12345678

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