Datasheet > NGB8206ANSL3G

NGB8206ANSL3G

更新时间： 2024-01-18 18:37:17

品牌	Logo	应用领域
力特 - LITTELFUSE		栅驱动双极性晶体管高压装置驱动器
页数	文件大小	规格书
8页	332K
描述
这款逻辑电平绝缘栅双极晶体管（IGBT）配有集成ESD与过压箝位保护装置的单片电路，可用于感应线圈驱动器应用。主要用途包括点火、直接燃油喷射或需要高压与高电流切换的应用。功能与特色: 应用: 终端产品:

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NGB8206ANSL3G 数据手册

NGB8202AN

Ignition IGBT

20 A, 400 V, N−Channel D²PAK

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

monolithic circuitry integrating ESD and Overvoltage clamped

protection for use in inductive coil drivers applications. Primary uses

include Ignition, Direct Fuel Injection, or wherever high voltage and

high current switching is required.

Littelfuse.com

20 AMPS, 400 VOLTS

Features

_CE(on)= 1.3 V @

• Ideal for Coil−on−Plug and Driver−on−Coil Applications

• Gate−Emitter ESD Protection

I_C= 10 A, V_GE. 4.5 V

• Temperature Compensated Gate−Collector Voltage Clamp Limits

Stress Applied to Load

• Integrated ESD Diode Protection

• Low Threshold Voltage for Interfacing Power Loads to Logic or

Microprocessor Devices

• Low Saturation Voltage

• High Pulsed Current Capability

• These are Pb−Free Devices

Applications

D PAK

CASE 418B

STYLE 4

• Ignition Systems

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

MARKING DIAGRAM

Rating

Collector−Emitter Voltage

Collector−Gate Voltage

Gate−Emitter Voltage

Symbol

Value

440

Unit

CES

Collector

CER

440

"15

8202xxG

AYWW

Collector Current−Continuous

@ T = 25°C − Pulsed

Continuous Gate Current

1.0

Gate

Emitter

Transient Gate Current (t≤2 ms, f≤100 Hz)

ESD (Charged−Device Model)

Collector

ESD

2.0

GB8202xx = Device Code

xx = AN

ESD (Human Body Model)

R = 1500 W, C = 100 pF

8.0

= Assembly Location

= Year

= Work Week

= Pb−Free Package

ESD (Machine Model) R = 0 W, C = 200 pF

ESD

500

Total Power Dissipation @ T = 25°C

150

1.0

W/°C

Derate above 25°C

ORDERING INFORMATION

Operating & Storage Temperature Range

T , T

−55 to +175

°C

stg

†

Device

Package

Shipping

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

NGB8202ANT4G

NGB8202ANTF4G

800/Tape & Reel

700/Tape & Reel

D PAK

(Pb−Free)

Publication Order Number:

December, 2016 − Rev. 10

NGB8202AN/D

12 3 4 5 6 7 8

下载PDF

与NGB8206ANSL3G相关器件

型号	品牌	描述	获取价格	数据表
NGB8206ANT4G	ONSEMI	Ignition IGBT 20 A, 350 V, N.Channel D2PAK	获取价格
NGB8206ANT4G	LITTELFUSE	这款逻辑电平绝缘栅双极晶体管（IGBT）配有集成ESD与过压箝位保护装置的单片电路，可用于	获取价格
NGB8206ANTF4G	ONSEMI	Ignition IGBT 20 A, 350 V, N.Channel D2PAK	获取价格
NGB8206ANTF4G	LITTELFUSE	这款逻辑电平绝缘栅双极晶体管（IGBT）配有集成ESD与过压箝位保护装置的单片电路，可用于	获取价格
NGB8206N	ONSEMI	Ignition IGBT 20 A, 350 V, N−Channel D2PAK	获取价格
NGB8206N_11	ONSEMI	Ignition IGBT 20 A, 350 V, N.Channel D2PAK	获取价格