Datasheet > NGB8202AN

NGB8202AN

更新时间： 2022-02-26 12:53:12

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
8页	124K
描述
Ignition IGBT 20 A, 400 V, N.Channel D2PAK

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NGB8202AN 数据手册

NGB8202N, NGB8202AN

TYPICAL ELECTRICAL CHARACTERISTICS

10000

= 5 V

1000

= −24 V

100

T = 25°C

= 200 V

1.0

0.1

T = 175°C

T = −40°C

−50 −25

75 100 125 150 175

0.5

1.5

2.5

3.5

, GATE TO EMITTER VOLTAGE (V)

T , JUNCTION TEMPERATURE (°C)

Figure 7. Transfer Characteristics

Figure 8. Collector−to−Emitter Leakage

Current vs. Temperature

10000

1000

100

2.50

2.25

2.00

1.75

1.50

Mean

iss

Mean + 4 s

oss

rss

Mean − 4 s

1.25

1.00

0.75

0.50

1.0

0.1

0.25

−50 −25

75 100 125 150 175

T , JUNCTION TEMPERATURE (°C)

, COLLECTOR TO EMITTER VOLTAGE (V)

Figure 9. Gate Threshold Voltage vs.

Temperature

Figure 10. Capacitance vs.

Collector−to−Emitter Voltage

= 300 V

= 5.0 V

= 1000 W

fall

= 9.0 A

L = 300 mH

delay

= 300 V

= 5.0 V

= 1000 W

fall

= 9.0 A

R = 33 W

100

125

150

175

100

125

150

175

T , JUNCTION TEMPERATURE (°C)

Figure 11. Resistive Switching Fall Time vs.

Temperature

Figure 12. Inductive Switching Fall Time vs.

Temperature

http://onsemi.com

1...3 4 567 8

下载PDF

与NGB8202AN相关器件

型号	品牌	描述	获取价格	数据表
NGB8202ANT4G	LITTELFUSE	暂无描述	获取价格
NGB8202ANT4G	ONSEMI	Ignition IGBT 20 A, 400 V, N.Channel D2PAK	获取价格
NGB8202ANTF4G	LITTELFUSE	Insulated Gate Bipolar Transistor,	获取价格
NGB8202N	ONSEMI	20 A, 400 V, N−Channel D2PAK	获取价格
NGB8202N_06	ONSEMI	Ignition IGBT	获取价格
NGB8202N_11	ONSEMI	Ignition IGBT 20 A, 400 V, N.Channel D2PAK	获取价格