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NGB8202N

更新时间： 2024-11-24 22:29:03
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 115K
描述
20 A, 400 V, N−Channel D2PAK

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中文翻译

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NGB8202N 数据手册

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NGB8202N  
Ignition IGBT  
20 A, 400 V, N−Channel D2PAK  
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features  
monolithic circuitry integrating ESD and Overvoltage clamped  
protection for use in inductive coil drivers applications. Primary uses  
include Ignition, Direct Fuel Injection, or wherever high voltage and  
high current switching is required.  
http://onsemi.com  
20 AMPS  
400 VOLTS  
VCE(on) = 1.3 V @  
IC = 10 A, VGE . 4.5 V  
Features  
• Ideal for Coil−on−Plug and Driver−on−Coil Applications  
• Gate−Emitter ESD Protection  
• Temperature Compensated Gate−Collector Voltage Clamp Limits  
Stress Applied to Load  
C
• Integrated ESD Diode Protection  
• Low Threshold Voltage for Interfacing Power Loads to Logic or  
Microprocessor Devices  
R
G
G
• Low Saturation Voltage  
• High Pulsed Current Capability  
R
GE  
• Optional Gate Resistor (R ) and Gate−Emitter Resistor (R  
)
G
GE  
Applications  
• Ignition Systems  
E
MARKING  
DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Collector−Emitter Voltage  
Collector−Gate Voltage  
Gate−Emitter Voltage  
Symbol  
Value  
440  
Unit  
V
NG  
B8202N  
YWW  
V
CES  
V
440  
V
CER  
2
D PAK  
CASE 418B  
STYLE 4  
V
"15  
V
GE  
Collector Current−Continuous  
I
20  
50  
A
DC  
A
AC  
C
@ T = 25°C − Pulsed  
C
NGB8202N= Device Code  
Continuous Gate Current  
I
I
1.0  
20  
mA  
mA  
kV  
G
G
Y
= Year  
Transient Gate Current (t≤2 ms, f≤100 Hz)  
ESD (Charged−Device Model)  
WW  
= Work Week  
ESD  
ESD  
2.0  
ORDERING INFORMATION  
ESD (Human Body Model)  
R = 1500 W, C = 100 pF  
kV  
†
8.0  
Device  
NGB8202NT4  
Package  
Shipping  
2
ESD (Machine Model) R = 0 W, C = 200 pF  
ESD  
500  
V
D PAK  
800 / Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Total Power Dissipation @ T = 25°C  
P
150  
1.0  
Watts  
C
D
Derate above 25°C  
W/°C  
Operating & Storage Temperature Range  
T , T  
J
−55 to +175  
°C  
stg  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
January, 2005 − Rev. 1  
NGB8202N/D  
12345678

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