5秒后页面跳转
NGB8204NT4 PDF预览

NGB8204NT4

更新时间: 2024-11-21 03:02:07
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
8页 150K
描述
Ignition IGBT 18 Amps, 400 Volts

NGB8204NT4 数据手册

 浏览型号NGB8204NT4的Datasheet PDF文件第2页浏览型号NGB8204NT4的Datasheet PDF文件第3页浏览型号NGB8204NT4的Datasheet PDF文件第4页浏览型号NGB8204NT4的Datasheet PDF文件第5页浏览型号NGB8204NT4的Datasheet PDF文件第6页浏览型号NGB8204NT4的Datasheet PDF文件第7页 
NGB8204N  
Ignition IGBT  
18 Amps, 400 Volts  
NChannel D2PAK  
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features  
monolithic circuitry integrating ESD and Overvoltage clamped  
protection for use in inductive coil drivers applications. Primary uses  
include Ignition, Direct Fuel Injection, or wherever high voltage and  
high current switching is required.  
http://onsemi.com  
18 AMPS, 400 VOLTS  
VCE(on) 3 2.0 V @  
IC = 10 A, VGE . 4.5 V  
Features  
C
Ideal for CoilonPlug Applications  
GateEmitter ESD Protection  
Temperature Compensated GateCollector Voltage Clamp Limits  
Stress Applied to Load  
G
Integrated ESD Diode Protection  
R
GE  
New Design Increases Unclamped Inductive Switching (UIS) Energy  
Per Area  
E
Low Threshold Voltage to Interface Power Loads to Logic or  
Microprocessor Devices  
Low Saturation Voltage  
2
D PAK  
CASE 418B  
STYLE 4  
High Pulsed Current Capability  
Integrated GateEmitter Resistor (R  
Emitter Ballasting for ShortCircuit Capability  
PbFree Package is Available  
)
1
GE  
MARKING DIAGRAM  
4
Collector  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
CollectorEmitter Voltage  
CollectorGate Voltage  
GateEmitter Voltage  
Symbol  
Value  
430  
430  
18  
Unit  
GB  
8204NG  
AYWW  
V
CES  
V
CER  
V
V
V
DC  
DC  
DC  
V
1
3
GE  
Gate  
Emitter  
2
Collector CurrentContinuous  
I
18  
50  
A
DC  
A
AC  
C
Collector  
@ T = 25°C Pulsed  
C
GB8204N = Device Code  
ESD (Human Body Model)  
R = 1500 W, C = 100 pF  
ESD  
kV  
A
= Assembly Location  
8.0  
Y
= Year  
ESD (Machine Model) R = 0 W, C = 200 pF  
ESD  
800  
V
WW  
G
= Work Week  
= PbFree Package  
Total Power Dissipation @ T = 25°C  
P
115  
0.77  
W
W/°C  
C
D
Derate above 25°C  
ORDERING INFORMATION  
Operating and Storage Temperature Range T , T  
55 to  
+175  
°C  
J
stg  
Device  
Package  
Shipping  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
2
NGB8204NT4  
D PAK  
800 / Tape & Reel  
800 / Tape & Reel  
2
NGB8204NT4G  
D PAK  
(PbFree)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
August, 2006 Rev. 3  
NGB8204N/D  

与NGB8204NT4相关器件

型号 品牌 获取价格 描述 数据表
NGB8204NT4G ONSEMI

获取价格

Ignition IGBT 18 Amps, 400 Volts
NGB8206AN ONSEMI

获取价格

Ignition IGBT 20 A, 350 V, N.Channel D2PAK
NGB8206ANSL3G ONSEMI

获取价格

Ignition IGBT 20 A, 350 V, N.Channel D2PAK
NGB8206ANSL3G LITTELFUSE

获取价格

这款逻辑电平绝缘栅双极晶体管(IGBT)配有集成ESD与过压箝位保护装置的单片电路,可用于
NGB8206ANT4G ONSEMI

获取价格

Ignition IGBT 20 A, 350 V, N.Channel D2PAK
NGB8206ANT4G LITTELFUSE

获取价格

这款逻辑电平绝缘栅双极晶体管(IGBT)配有集成ESD与过压箝位保护装置的单片电路,可用于
NGB8206ANTF4G ONSEMI

获取价格

Ignition IGBT 20 A, 350 V, N.Channel D2PAK
NGB8206ANTF4G LITTELFUSE

获取价格

这款逻辑电平绝缘栅双极晶体管(IGBT)配有集成ESD与过压箝位保护装置的单片电路,可用于
NGB8206N ONSEMI

获取价格

Ignition IGBT 20 A, 350 V, N−Channel D2PAK
NGB8206N_11 ONSEMI

获取价格

Ignition IGBT 20 A, 350 V, N.Channel D2PAK