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NGB8202NT4G PDF预览

NGB8202NT4G

更新时间： 2024-01-02 12:37:28
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
7页 145K
描述
Ignition IGBT

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NGB8202NT4G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：SFM
包装说明：LEAD FREE, CASE 418B-04, D2PAK-3针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
Factory Lead Time：1 week风险等级：8
外壳连接：COLLECTOR最大集电极电流 (IC)：20 A
集电极-发射极最大电压：440 V配置：SINGLE WITH BUILT-IN DIODE AND RESISTOR
最大降落时间（tf）：14000 ns门极发射器阈值电压最大值：2.1 V
门极-发射极最大电压：15 VJESD-30 代码：R-PSSO-G2
JESD-609代码：e3元件数量：1
端子数量：2最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：150 W
认证状态：Not Qualified最大上升时间（tr）：8000 ns
子类别：Insulated Gate BIP Transistors表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：40
晶体管应用：POWER CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：18500 ns标称接通时间 (ton)：6500 ns
Base Number Matches：1

NGB8202NT4G 数据手册

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NGB8202N  
Ignition IGBT  
20 A, 400 V, N−Channel D2PAK  
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features  
monolithic circuitry integrating ESD and Overvoltage clamped  
protection for use in inductive coil drivers applications. Primary uses  
include Ignition, Direct Fuel Injection, or wherever high voltage and  
high current switching is required.  
http://onsemi.com  
20 AMPS, 400 VOLTS  
VCE(on) = 1.3 V @  
IC = 10 A, VGE . 4.5 V  
Features  
• Ideal for Coil−on−Plug and Driver−on−Coil Applications  
• Gate−Emitter ESD Protection  
C
• Temperature Compensated Gate−Collector Voltage Clamp Limits  
Stress Applied to Load  
• Integrated ESD Diode Protection  
R
• Low Threshold Voltage for Interfacing Power Loads to Logic or  
Microprocessor Devices  
G
G
R
GE  
• Low Saturation Voltage  
• High Pulsed Current Capability  
• Optional Gate Resistor (R ) and Gate−Emitter Resistor (R  
)
E
G
GE  
• Pb−Free Package is Available  
2
D PAK  
CASE 418B  
STYLE 4  
Applications  
• Ignition Systems  
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
MARKING DIAGRAM  
Rating  
Collector−Emitter Voltage  
Collector−Gate Voltage  
Gate−Emitter Voltage  
Symbol  
Value  
440  
Unit  
V
4
Collector  
V
CES  
V
CER  
440  
V
GB  
V
"15  
V
GE  
8202NG  
AYWW  
Collector Current−Continuous  
I
20  
50  
A
DC  
A
AC  
C
@ T = 25°C − Pulsed  
C
1
Gate  
3
Continuous Gate Current  
I
I
1.0  
20  
mA  
mA  
kV  
G
G
Emitter  
2
Transient Gate Current (t≤2 ms, f≤100 Hz)  
ESD (Charged−Device Model)  
Collector  
ESD  
ESD  
2.0  
GB8202N = Device Code  
A
Y
WW  
G
= Assembly Location  
ESD (Human Body Model)  
R = 1500 W, C = 100 pF  
kV  
= Year  
8.0  
= Work Week  
= Pb−Free Package  
ESD (Machine Model) R = 0 W, C = 200 pF  
ESD  
500  
V
Total Power Dissipation @ T = 25°C  
P
150  
1.0  
W
W/°C  
C
D
Derate above 25°C  
ORDERING INFORMATION  
Operating & Storage Temperature Range  
T , T  
−55 to +175  
°C  
†
J
stg  
Device  
Package  
Shipping  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
2
NGB8202NT4  
D PAK  
800/Tape & Reel  
800/Tape & Reel  
2
NGB8202NT4G  
D PAK  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
August, 2006 − Rev. 5  
NGB8202N/D  
1234567

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