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NGB15N41CL PDF预览

NGB15N41CL

更新时间： 2024-11-21 00:04:31
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
11页 168K
描述
Ignition IGBT 15 Amps, 410 Volts

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NGB15N41CL 数据手册

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NGD15N41CL,  
NGB15N41CL,  
NGP15N41CL  
Preferred Device  
Ignition IGBT  
15 Amps, 410 Volts  
N−Channel DPAK, D2PAK and TO−220  
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features  
monolithic circuitry integrating ESD and Over−Voltage clamped  
protection for use in inductive coil drivers applications. Primary uses  
include Ignition, Direct Fuel Injection, or wherever high voltage and  
high current switching is required.  
http://onsemi.com  
15 AMPS  
410 VOLTS  
VCE(on) 3 2.1 V @  
IC = 10 A, VGE . 4.5 V  
C
Features  
• Ideal for Coil−on−Plug Applications  
• DPAK Package Offers Smaller Footprint and Increased Board Space  
• Gate−Emitter ESD Protection  
• Temperature Compensated Gate−Collector Voltage Clamp Limits  
Stress Applied to Load  
R
G
G
R
GE  
• Integrated ESD Diode Protection  
• New Design Increases Unclamped Inductive Switching (UIS) Energy  
E
Per Area  
• Low Threshold Voltage to Interface Power Loads to Logic or  
Microprocessor Devices  
• Low Saturation Voltage  
4
DPAK  
CASE 369C  
STYLE 2  
2
1
3
• High Pulsed Current Capability  
• Optional Gate Resistor (R ) and Gate−Emitter Resistor (R  
)
G
GE  
2
4
• Pb−Free Packages are Available  
D PAK  
CASE 418B  
STYLE 4  
1
2
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
3
Rating  
Collector−Emitter Voltage  
Collector−Gate Voltage  
Gate−Emitter Voltage  
Symbol Value  
Unit  
V
CES  
V
CER  
440  
440  
15  
V
V
V
DC  
DC  
DC  
4
V
GE  
Collector Current−Continuous  
I
15  
50  
A
A
TO−220AB  
CASE 221A  
STYLE 9  
C
DC  
AC  
@ T = 25°C − Pulsed  
C
ESD (Human Body Model)  
ESD  
kV  
R = 1500 Ω, C = 100 pF  
8.0  
1
ESD (Machine Model) R = 0 Ω, C = 200 pF  
ESD  
800  
V
2
3
Total Power Dissipation @ T = 25°C  
P
107  
Watts  
C
D
Derate above 25°C  
0.71  
W/°C  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 8 of this data sheet.  
Operating and Storage Temperature Range  
T , T  
−55 to  
+175  
°C  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
DEVICE MARKING INFORMATION  
See general marking information in the device marking  
section on page 8 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
May, 2006 − Rev. 7  
NGD15N41CL/D  
1234567...11

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